NuAxi Stream - Real-Time Semiconductor Intelligence

Mon, Oct 26

21:00Impact score 10
SEMICON West 2026: After the Toast, the Hard Questions
SEMICON West 2026 was held October 13 to 15 at the Moscone Center in San Francisco. The article states the opening toast marked an industry that has already crossed $1 trillion in annual revenue, almost four years ahead of earlier projections. According to WSTS (World Semiconductor Trade Statistics), first-half 2026 sales were $702 billion, double a year earlier, and its August update points to roughly $1.66 trillion for the full year (a forecast), with memory up about 300% (forecast). SEMI expected more than 35,000 attendees over the three days on a sold-out floor of over 1,500 booths, with an exhibitor count of more than 700 companies and organizations. Topics included AI scaling, heterogeneous integration, advanced manufacturing, supply-chain resilience, advanced packaging and the economics of agentic AI. The next SEMICON West opens in Phoenix in March 2027; PDF Solutions held its 2026 CONNECT Conference on October 15–16 in San Francisco. The full-year sales figure is a WSTS forecast, not an achieved result.
semiconductorsmemorySemiWiki
20:56Impact score 65
Ventec opens first Southeast Asian plant in Thailand
Ventec International Group officially opened its first Southeast Asian manufacturing facility in Thailand, producing prepreg, bond-ply and laminates for high-reliability PCBs. The company expects the facility to produce around 3 million square metres of prepreg and 80,000 square metres of bond-ply per month at full capacity, with production ramping up gradually through 2028. The investments are meant to make its supply chain more resilient and meet growing demand from AI, high-performance computing and advanced electronic materials, presented as part of a "China plus one" strategy.
prepregbond-plylaminatesVentec International GroupEvertiqCapacity Change
15:56Impact score 85
NVIDIA Cuts HBM4 Speed and NVLink Bandwidth Targets for "Vera Rubin"
NVIDIA has officially implemented specification reductions across its "Vera Rubin" product line. According to the updated product specification sheet, HBM4 memory speed has been reduced from the previous 11.7 Gbps per pin to 9.6 Gbps per pin; in the "Vera Rubin" NVL72 rack-scale solution, total memory bandwidth is now 1,400 TB/s, down from the previously advertised 1,580 TB/s. On the interconnect side, NVLink bandwidth per GPU has been reduced from 1.8 TB/s to 1.5 TB/s, and bidirectional NVLink GPU bandwidth correspondingly falls from 3.6 TB/s to 3 TB/s. According to the source, the cause is signal integrity: NVIDIA reportedly lowered the NVLink Nyquist frequency target from 56 GHz to 47 GHz, which reduces the electrical demands on the SerDes, cables, and materials and can improve manufacturing yields and overall feasibility at the cost of some peak interconnect bandwidth; on the memory side, it indicates the company's implementation of memory bus width and overall electrical signaling is insufficient to support higher speeds. The source also notes this issue does not stem directly from NVIDIA's suppliers.
HBM4NVLinkNVIDIATechPowerUp
14:15Impact score 45
Atomera and IQE hook up to advance RF GaN
Atomera, a semiconductor transistor materials and technology licensing company, has entered into a Joint Development Agreement (JDA) with IQE to bring high-performance, cost-effective RF GaN to market. The collaboration combines Atomera's recently announced application of Mears Silicon Technology (MST) to silicon substrates for RF GaN with IQE's compound semiconductor epitaxy expertise. Under the agreement, the companies will collaborate to demonstrate GaN epitaxy on Atomera's MST-enabled silicon wafers, with an initial focus on RF GaN-on-silicon applications and the aim of demonstrating best-in-class linearity and loss for high-volume RF markets. The project will center on the production and testing of MST-enabled GaN-on-silicon wafers, with the goal of rapidly developing the best achievable material and making samples available for foundry, IDM and fabless customer engagement. The companies anticipate a multi-cycle development process and the JDA leaves room to expand the work, both to further refine RF GaN and to pursue other GaN use cases including power electronics. This is a signed development agreement covering a planned development effort, with no production or commercialization results yet.
RF GaNGaN-on-silicon epitaxyMST-enabled silicon wafersAtomera, IQEElectronics WeeklyPartnership/M&A
14:04Impact score 62
LS Eco Energy to Invest 64.9 Billion Won in Vietnam Ultracapacitor Plant
LS Eco Energy said in a regulatory filing on Oct. 26 that it plans to invest 64.9 billion won in a new medium-sized ultracapacitor (UC) cell production facility at its Vietnamese subsidiary, LS Cable & System Vietnam (LSCV), targeting AI data centers. The company also approved a 35 billion won capital increase in LSCV to finance part of the investment, equivalent to about 54% of the total facility spending. The facility will be built on unused land within LSCV's existing factory in Vietnam, with mass production scheduled to begin in April 2027 and facility investment expected to be completed by the end of June that year. LS Eco Energy aims to generate approximately 150 billion won in annual revenue from its ultracapacitor business by 2030. The Vietnam facility is intended to support LS Materials' growing overseas orders: on Oct. 13, LS Materials signed an ultracapacitor supply agreement worth approximately $51.5 million with a US hydrogen fuel cell company and is negotiating additional supply contracts. LS Eco Energy will manufacture ultracapacitors as an OEM using technology owned by LS Materials, and plans to reduce production costs by taking advantage of Vietnam's relatively low labor and utility expenses while considering further investment depending on additional orders.
ultracapacitor (UC)medium-sized ultracapacitor cellLS Eco Energy, LS Cable & System Vietnam (LSCV) and 3 totalThe ElecCapacity Change
14:00Impact score 55
NEU raises $7.6M to advance LFP recycling, boost supply chain
Singapore-based LFP battery recycling company NEU Battery Materials announced the oversubscribed close of its USD 7.6 million funding round, co-led by Shift4Good and SGInnovate, with participation from new investors including Lotus Singapore Group and M7 Holdings, as well as existing backers such as Paragon Ventures I. The funding comes off the back of NEU's newly commissioned 1,300-ton-per-year Singapore factory. The capital will support the planned ramp-up of producing battery-grade lithium from LFP feedstock such as cathode production scraps and end-of-life black mass, and the company's international expansion; CEO Bryan Oh said the funding will catalyse the scale-up and deployment of its modular LFP recycling technology.
LFP batteriesbattery-grade lithiumNEU Battery MaterialsEvertiqPartnership/M&A
06:31Impact score 30
Fadu IPO Fraud Trial: “We’ll Go Under Without Listing” vs. “Conservative Revenue Estimates”
The 13th Criminal Division of the Seoul Southern District Court held the fourth hearing on Oct. 22 in the case against Fadu executives over alleged violations of the Capital Markets Act, with former CEO Lee Ji-hyo, current CEO Nam Yi-hyun and executive vice president Won Jong-taek attending as defendants. Prosecutors disclosed internal Microsoft Teams conversations from March 2023 — including 'If we can't go public, we'll have a funding hole' and 'So we'll just go under in July' — arguing Fadu pressed ahead with its IPO despite knowing revenue would plunge; Fadu went public in August 2023. Prosecutors also alleged Fadu used earlier order forecasts for its securities registration statement despite knowing major customers including SMART Modular, SpaceX and SK hynix had postponed or suspended orders for the second half of 2023, with Fadu having projected shipments of 3,200 SSDs for SpaceX satellite servers in Q4 2023. According to prosecutors, former CEO Lee Ji-hyo instructed staff on May 18, 2023 to 'assume no orders from SpaceX for now,' and the following day SpaceX informed Fadu there would be no additional POs before Q3 2024. EVP Won Jong-taek wrote in May 2023 that 'even if we lower the annual revenue target from 240 billion won to 150 billion won, actual results will likely be far lower.' Fadu's production plan from late May 2023 had removed H2 SpaceX orders, and contract manufacturer Quanta Storage demanded compensation for prolonged equipment downtime. The defense countered that the registration statement figures were conservative, worst-case estimates: Fadu included only about 50% of SMART Modular's anticipated order volume, excluded more than 30,000 additional units proposed by SMART Modular in late April 2023 and a 43,500-unit forecast from Hagiwara Solutions in May 2023; on the SpaceX suspension, the May 19 remark came from a SpaceX technical engineer rather than a purchasing official, and Lee Ji-hyo separately confirmed with SpaceX's sales organization the possibility of orders resuming within the year. Fadu resumed shipments toward the end of 2023, but supplied 2TB models for Falcon 9 rockets rather than the originally planned 8TB satellite models, with substantially smaller revenue contribution. Second witness Park Jong-hyun, head of Fadu's SoC business team, testified the sharp 2023 decline in SSD controller shipments for Meta stemmed from issues between SK hynix and Meta: SK hynix told Fadu in late 2022 it expected to supply about 900,000 controllers annually to Meta, but the forecast was abruptly cut to 350,000 units on Jan. 6 due to a dispute, and SK hynix discontinued the existing DRAM used in Meta SSDs and began redesigning. Fadu planned to cut the price of its third-generation SSD controllers from $43–$48 to around $30 to regain Meta's business, and included 434,000 controllers for Meta in its 2023 forecast — exceeding the 350,000-unit forecast — which appeared to contradict claims the estimates were conservative. Fadu ultimately failed to secure additional Meta orders through SK hynix; Meta switched its SSD supplier to SanDisk in 2024, and since 2024 Fadu has supplied SSD controllers to Meta through SanDisk.
SSD controllerssolid-state drives (SSDs)Fadu, SK hynix and 8 totalThe Elec
02:00Impact score 25
CEO Interview with Eric Tsai of Mivium
Mivium, Inc., a US-based materials technology company in Fremont, California co-founded in 2022 by Eric Tsai (CEO), stated in an interview that it produces submicron gallium nitride (GaN) powder and has just published independently characterized results. The announced material is phase-pure hexagonal wurtzite GaN in a 300 to 500 nanometer range with uniform distribution and faceted morphology, confirmed by independent third-party characterization using SEM, EDS, XRD, XPS, GDMS and ICP-MS. The company is US-based and has raised more than $10.5 million. Target applications are crystal growth, substrate development and thin-film work; the company states it is not a wafer or device company and does not assume its powder drops into every epitaxy flow, with fit being application-specific. The same platform extends to other wide bandgap materials, including gallium oxide and boron nitride. On thin films, Mivium has completed initial in-house GaN deposition work derived from the powder platform, but describes it as early-stage R&D. The interview cites demand from AI power, EVs and RF pulling on upstream supply, and customer concerns about batch-to-batch repeatability and supply; these are company statements. The source does not report any price change, capacity change or supply-demand event.
submicron gallium nitride (GaN) powdergallium oxideboron nitrideMivium, Inc.SemiWiki
00:30Impact score 0
[News] SICC Reports 2,330.24% Surge in Net Profit for First Three Quarters
SICC reported revenue of CNY 1.559 billion for the first three quarters of 2026, up 40.22% year on year, and net profit attributable to shareholders of CNY 27.2162 million, up 2,330.24% year on year. Third-quarter revenue reached CNY 646 million, up 102.89% YoY, and net profit totaled CNY 85.8329 million. 8-inch silicon carbide (SiC) substrates accounted for more than 50% of revenue in the third quarter. The growth is attributed to structural shifts in downstream demand, including rising adoption of 800V high-voltage platforms in new energy vehicles and AI server power supplies.
8-inch silicon carbide (SiC) substratesSICCTrendForceInventory Shift

Sun, Oct 25

09:53Impact score 55
PNT to Showcase Roll-to-Roll Equipment at China Display and Film Exhibitions
PNT said on Oct. 23 that it will participate in C-TOUCH & DISPLAY SHENZHEN 2026 and FILM & TAPE EXPO 2026, scheduled for Oct. 27–29 in Shenzhen, China, to showcase its high-speed, high-precision roll-to-roll equipment and web handling technology targeting China's display and functional film markets. PNT plans to identify local customers, expand opportunities for equipment orders, assess equipment demand among local companies, and pursue discussions on new equipment supply contracts. The article notes that Chinese manufacturers are expanding production capacity for related materials, particularly those used in high-value-added products such as foldable and automotive displays. This is a participation plan and prospective contract discussions; no confirmed supply contract has been reported.
roll-to-roll equipmentoptical films for displaysindustrial functional materialsPNTThe Elec

Fri, Oct 23

23:32Impact score 55
Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance
At an event this week, Micron announced that its next-generation 3D NAND (G11), which it plans to enter mass production in 2H 2027, is set to offer three significant advantages: doubling storage density (approximately twice the bit density of G9, with 3D TLC going from 21 Gb/mm² to 42 Gb/mm²), increasing I/O performance by up to 50% versus the company's current-generation NAND memory (interface speed from 3,600 MT/s to 5,400 MT/s), and reducing data transfer energy consumption per bit by more than 25%. G11 will adopt wafer-on-wafer bonding, manufacturing the NAND array on a new 3D NAND node and the peripheral circuits and I/O on a logic process before bonding them together, and will transition to more than 400 NAND layers; Micron has not disclosed the exact number of active wordline layers or memory decks. Micron executive Scott DeBoer described G11 as the world's most advanced NAND, ramping in the second half of next year. Micron also expects to disclose more G11 technical details in 2027 and, beyond G11, is developing high-mobility materials and denser cell architectures to continue XYZ scaling; specific architectural details, density targets, or production schedules for post-G11 generations have not been disclosed. These are the company's stated plans and expectations; mass production has not yet occurred.
3D NANDG11 3D NANDMicronTom's HardwareCapacity Change
23:00Impact score 55
XP Power Expands Medical Power Portfolio with UCH750 Series
XP Power has introduced the UCH750 series of 750W convection-cooled AC-DC power supplies for medical and industrial equipment requiring quiet operation, high efficiency, and reliable performance. The compact, chassis-mount, fanless design reduces acoustic noise and removes a wear-prone mechanical component, making the supplies suitable for noise-sensitive applications including medical imaging, patient monitoring, diagnostic instruments, treatment equipment, and home healthcare devices, as well as hospital equipment, factory automation, semiconductor manufacturing, test-and-measurement systems, and telecommunications infrastructure. The series achieves up to 96% conversion efficiency, and each unit measures 203.2 × 127.0 × 40.0 mm. It supports medical equipment requiring BF (Body Floating) applied-part classification, provides two Means of Patient Protection (2 × MOPP) of isolation between input and output, with a maximum patient leakage current of 100 µA under 264 VAC, 60 Hz conditions. The series reports to IEC 60601-1 and has UL and TÜV safety approvals, with Class I and Class II versions available; IEC 62368-1 safety approvals support IT and industrial integration, and the UCH750 meets EN 55032 Class B limits for conducted and radiated emissions. Five models provide nominal DC outputs of 12 V, 24 V, 36 V, 48 V, and 54 V from a universal 90–264 VAC input, delivering the full 750 W output from a 100 VAC input at ambient temperatures up to +50°C. Additional features include remote on/off control, a 5 VDC/2 A standby output, and built-in protection against overload, short circuit, overvoltage, and overtemperature. The series is available through Avnet Abacus, DigiKey, element14, Farnell, Mouser, RS, TME, authorized regional distributors, and directly from XP Power, with a three-year warranty. This is a product introduction announcement and does not constitute confirmed capacity or price changes.
UCH750 series 750W convection-cooled AC-DC power suppliesXP PowerPower Electronics News
22:00Impact score 15
The Wafer Is the New Battleground: Soitec CPO René Jonker on Building AI from the Substrate Up
In an interview at SEMICON West 2026, Soitec Chief Product Officer René Jonker discussed the company, which was spun out of CEA-Leti in 1992 around the Smart Cut process. Soitec now runs five main technology platforms: RF-SOI (used in RF switches and low-noise amplifiers in practically every 5G phone and Wi-Fi module), FD-SOI (used in automotive radar, IoT microcontrollers and edge devices, often cutting power by 30 to 50 percent without a node shrink), Power-SOI (high-voltage automotive and industrial circuits), POI (acoustic RF filters for 5G and 6G), and Photonics-SOI, developed a decade ago and now the platform carrying the company. Jonker said Photonics-SOI is 'now seen as the new gold'; as AI cluster connectivity pushes traffic from copper to fiber, it is driving Soitec's business 'with a very impressive growth rate' and underpins the co-packaged optics now coming into AI data centers. The article notes that Soitec trades on Euronext Paris and that an investor who put $100 into its stock in January 2026 was holding more than $600 by early October. On competition, Jonker said direct competition comes mostly from GlobalWafers, which 'has or used to have access to our IP,' while technology-level competition includes FD-SOI customers who could choose FinFET at TSMC, and a trade-off between silicon and indium phosphide for optical waveguides. SmartSiC (lowering the cost of SiC power devices for EV inverters) and RF-GaN on insulator (in development for 6G power amplifiers and aerospace) remain in development, and FD-SOI is moving to smaller geometries.
Photonics-SOIRF-SOIFD-SOISoitecSemiWiki
21:50Impact score 30
Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency
Navitas Semiconductor (Nasdaq: NVTS) announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK form factor and has a class-leading RDS(ON) (8 mΩ). It was developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure, enabled by Navitas' fourth-generation GeneSiC Trench-Assisted Planar (TAP) architecture; the launch extends Navitas' 2300 V and 3300 V ultra-high voltage SiC portfolio. The modules use an aluminum nitride (AlN) active-metal-braze (AMB) substrate supporting isolation capability of over 5 kV, epoxy-resin potting technology delivering 10x improvements in thermal conductivity versus silicone gel, high-current press-fit pins with twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM). The new module family will be qualified to Navitas' AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements and includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing, more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R), implements extended power-cycling and temperature-cycling testing, and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices. The announcement places the module family at the center of Navitas' AI infrastructure portfolio as the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks.
ultra-high-voltage (UHV) SiC power module familyfourth-generation GeneSiC Trench-Assisted Planar (TAP) architectureNavitas SemiconductorEE Journal
21:30Impact score 10
China can make advanced chips without EUV, but the bill keeps growing
An analysis article published 23 October 2026 reports that export controls keep ASML's most advanced EUV lithography machines out of China, so the country's chip industry relies on DUV lithography with multiple patterning to make advanced chips, at the cost of bigger dies, more defects, lower yields, longer manufacturing times and higher bills. Chris Mack, co-founder and CTO of Fractilia, said industry conventional wisdom held that three exposures on a 193 immersion tool cost about the same as one exposure on an EUV tool, and that at four masks EUV became more cost-effective. Teardowns of Huawei's Mate 60 Pro in 2023 found its Kirin 9000S processor made by SMIC using a second-generation 7nm-class process without EUV; analysis of Huawei's Kirin 9030 found SMIC had pushed its DUV-based process closer to 5nm-class density, though it continued to lag TSMC and Samsung leading processes. A June Morgan Stanley report estimated Chinese DRAM maker CXMT was producing only around one-third as many bits per wafer as Western competitors, with the older process node accounting for only about a third of that shortfall, and said access to lithography is a 'hard ceiling' on Chinese memory development. Micron's 1-alpha generation was developed without EUV, showing how far DUV can be stretched; Micron's newer 1-gamma DRAM process uses EUV, which Micron said achieves more than 30% greater bit density per wafer than its preceding 1-beta generation. Morgan Stanley assumes CXMT remains stuck on its 1-alpha process without EUV, yet raises its share of global DRAM bit supply from 14% in 2026 to 16% in 2028 by building more greenfield capacity, and expects China's AI chip self-sufficiency to rise from 42% in 2025 to 70% by 2030. Mack said he would be hard pressed to believe a three-nanometer or two-nanometer node is economically viable without EUV.
DUV lithographyEUV lithographyDRAMASML, SMIC and 7 totalTom's Hardware
21:21Impact score 45
Atomera signs JDA with IQE to bring high-performance, cost-effective RF GaN-on-Si to volume markets
Atomera Inc, a semiconductor transistor materials and technology licensing company based in Los Gatos, CA, USA, has entered into a joint development agreement (JDA) with IQE plc, an epiwafer and substrate maker based in Cardiff, Wales, UK, to bring high-performance, cost-effective RF gallium nitride (GaN-on-Si) to volume markets. This is a joint development arrangement, planned in nature and still at the development stage, with volume production yet to be realized.
RF GaN (gallium nitride)Atomera Inc, IQE plcSemiconductor TodayPartnership/M&A
21:00Impact score 55
US to provide up to $389 million in CHIPS awards to 4 firms
The US Department of Commerce announced the signing of four letters of intent to provide up to USD 389 million in federal R&D awards under the CHIPS and Science Act (reported October 23, 2026). Under the final awards, each company will conduct R&D to address critical projects spanning power semiconductor devices, modules and materials essential to the semiconductor supply chain. Helion will receive up to USD 175 million to develop, scale and establish domestic capabilities in high-voltage power semiconductors and advanced energy power modules for high-peak-current pulsed-power applications in fusion power generation. Commonwealth Fusion Systems will receive up to USD 85 million for R&D on semiconductors for radio-frequency plasma heating, power electronics, embedded electronics for fusion diagnostics, and radiation-hardened electronics. Vertical Semiconductor will receive up to USD 73 million to advance its vertical GaN power semiconductors, enabling more efficient and compact power delivery for advanced computing. Sibelco will receive up to USD 56 million to develop next-generation purification and finishing technologies for ultra-high-purity quartz used in crystal growth crucibles and other hardware. This is an announcement of signed letters of intent for R&D funding, a policy development to be watched for any price impact.
power semiconductor devicespower semiconductor modulesvertical GaN power semiconductorsHelion, Commonwealth Fusion Systems and 4 totalEvertiqPolicy/Regulation
11:56Impact score 0
US signs up to US$389 million in CHIPS R&D deals for power chips and fusion
The US Department of Commerce signed letters of intent with four companies on October 22, 2026, to provide up to US$389 million in federal research and development awards under the CHIPS and Science Act, targeting the semiconductors and materials used to control, convert, and deliver power.
semiconductors and materials used to control, convert, and deliver powerDigiTimes AsiaPolicy/Regulation
08:31Impact score 50
SK Hynix reportedly engages suppliers to bring 30% more efficient iHBM cooling to HBM5 production
According to reports, SK Hynix is reportedly working with materials and equipment suppliers to commercialise its next-generation iHBM cooling technology, targeting a reduction of more than 30% in thermal resistance, with the technology intended for HBM5 production. The initiative aims to address mounting heat dissipation challenges in HBM and strengthen the company's competitiveness in AI memory. The claim is reported ("reportedly") and describes a planned development effort; commercialisation and mass production are not confirmed as achieved.
HBM5iHBM cooling technologySK HynixDigiTimes Asia
06:51Impact score 60
Merck Expands Molybdenum Use to DRAM and Logic Chips
Germany's Merck plans to expand the use of molybdenum dioxide dichloride (MoO₂Cl₂) precursors from NAND flash memory to DRAM and logic semiconductors. Bing Han, senior vice president of the Thin Film Materials business at Merck Electronics, said at a press conference at Sono Felice Samsung in Gangnam on Oct. 21 that as device structures shrink, conductivity issues with copper and tungsten will drive greater adoption of molybdenum. Merck has established a molybdenum precursor production facility in Eumseong, North Chungcheong Province, which will be integrated with its CHEMKEEPER Vapor 200 materials delivery systems made at its Ansan plant and offered as a turnkey solution. The expansion uses land near an existing plant of M Chemicals, which Merck acquired in 2023; the site previously produced hafnium-based high-k dielectric precursors, construction began in 2024, and the facility was prepared for operation within two years. Han said Merck is planning production capacity sufficient to meet all demand from Korean customers, but the company did not disclose specific production capacity or investment figures, and it plans to eventually expand support beyond Korea to customers across Asia. As background: Samsung Electronics began using molybdenum in its 200-layer-class NAND in 2024, and SK hynix has replaced some word-line materials with molybdenum in its 300-layer-class NAND; Lam Research, Tokyo Electron and Applied Materials are among the suppliers of molybdenum deposition equipment. Hein said Merck is reviewing production capacity with customers in preparation for semiconductor materials consumption potentially doubling within the next five years.
NAND flash memoryDRAMlogic semiconductorsMerck, Merck Electronics and 4 totalThe ElecCapacity Change

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Mon, Oct 26

SEMICON West 2026: After the Toast, the Hard Questions

Ventec opens first Southeast Asian plant in Thailand

NVIDIA Cuts HBM4 Speed and NVLink Bandwidth Targets for "Vera Rubin"

Atomera and IQE hook up to advance RF GaN

LS Eco Energy to Invest 64.9 Billion Won in Vietnam Ultracapacitor Plant

NEU raises $7.6M to advance LFP recycling, boost supply chain

Fadu IPO Fraud Trial: “We’ll Go Under Without Listing” vs. “Conservative Revenue Estimates”

CEO Interview with Eric Tsai of Mivium

[News] SICC Reports 2,330.24% Surge in Net Profit for First Three Quarters

Sun, Oct 25

PNT to Showcase Roll-to-Roll Equipment at China Display and Film Exhibitions

Fri, Oct 23

Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

XP Power Expands Medical Power Portfolio with UCH750 Series

The Wafer Is the New Battleground: Soitec CPO René Jonker on Building AI from the Substrate Up

Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency

China can make advanced chips without EUV, but the bill keeps growing

Atomera signs JDA with IQE to bring high-performance, cost-effective RF GaN-on-Si to volume markets

US to provide up to $389 million in CHIPS awards to 4 firms

US signs up to US$389 million in CHIPS R&D deals for power chips and fusion

SK Hynix reportedly engages suppliers to bring 30% more efficient iHBM cooling to HBM5 production

Merck Expands Molybdenum Use to DRAM and Logic Chips

Chip Teardown Lab2 opened

Component price indexNPI, vs. prior period

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