NuAxiSemiconductor trade intelligence

Micron's next-generation 3D NAND to double bit density with over 400 layers, offering extreme performance

What happened

At an event this week, Micron announced that its next-generation 3D NAND (G11), which it plans to enter mass production in 2H 2027, is set to offer three significant advantages: doubling storage density (approximately twice the bit density of G9, with 3D TLC going from 21 Gb/mm² to 42 Gb/mm²), increasing I/O performance by up to 50% versus the company's current-generation NAND memory (interface speed from 3,600 MT/s to 5,400 MT/s), and reducing data transfer energy consumption per bit by more than 25%. G11 will adopt wafer-on-wafer bonding, manufacturing the NAND array on a new 3D NAND node and the peripheral circuits and I/O on a logic process before bonding them together, and will transition to more than 400 NAND layers; Micron has not disclosed the exact number of active wordline layers or memory decks. Micron executive Scott DeBoer described G11 as the world's most advanced NAND, ramping in the second half of next year. Micron also expects to disclose more G11 technical details in 2027 and, beyond G11, is developing high-mobility materials and denser cell architectures to continue XYZ scaling; specific architectural details, density targets, or production schedules for post-G11 generations have not been disclosed. These are the company's stated plans and expectations; mass production has not yet occurred.