Micron Plans 400-Layer 3D NAND with Wafer-to-Wafer Bonding in 2027
What happened
Micron has announced that G11 will be its first 3D NAND Flash and is actively working on bringing its next-generation G11 NAND technology to production. Its current G9 technology is shipping across Micron's product portfolio with over 200 layers of scaling; as the current technology reaches its limitations, Micron aims with G11 to use wafer-on-wafer 3D NAND stacking to double the capacity of NAND modules, splitting each wafer into a memory cell wafer and one containing peripheral logic circuits, combined via hybrid bonding technology. Micron plans to ship 400-layer NAND in the second half of 2027. The source also notes that Chinese NAND maker YMTC has been making 3D stacked NAND for some time using Xtacking technology. This is a plan, not an achieved result.
Impact and signal
Affected components and suppliers
Source and time
Source: TechPowerUp · 10/27/2026 · View original source
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