Atomera and IQE hook up to advance RF GaN

What happened

Atomera, a semiconductor transistor materials and technology licensing company, has entered into a Joint Development Agreement (JDA) with IQE to bring high-performance, cost-effective RF GaN to market. The collaboration combines Atomera's recently announced application of Mears Silicon Technology (MST) to silicon substrates for RF GaN with IQE's compound semiconductor epitaxy expertise. Under the agreement, the companies will collaborate to demonstrate GaN epitaxy on Atomera's MST-enabled silicon wafers, with an initial focus on RF GaN-on-silicon applications and the aim of demonstrating best-in-class linearity and loss for high-volume RF markets. The project will center on the production and testing of MST-enabled GaN-on-silicon wafers, with the goal of rapidly developing the best achievable material and making samples available for foundry, IDM and fabless customer engagement. The companies anticipate a multi-cycle development process and the JDA leaves room to expand the work, both to further refine RF GaN and to pursue other GaN use cases including power electronics. This is a signed development agreement covering a planned development effort, with no production or commercialization results yet.

Impact and signal

Affected components and suppliers

Source and time

Source: Electronics Weekly · 10/25/2026 · View original source