Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency
What happened
Navitas Semiconductor (Nasdaq: NVTS) announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK form factor and has a class-leading RDS(ON) (8 mΩ). It was developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure, enabled by Navitas' fourth-generation GeneSiC Trench-Assisted Planar (TAP) architecture; the launch extends Navitas' 2300 V and 3300 V ultra-high voltage SiC portfolio. The modules use an aluminum nitride (AlN) active-metal-braze (AMB) substrate supporting isolation capability of over 5 kV, epoxy-resin potting technology delivering 10x improvements in thermal conductivity versus silicone gel, high-current press-fit pins with twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM). The new module family will be qualified to Navitas' AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements and includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing, more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R), implements extended power-cycling and temperature-cycling testing, and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices. The announcement places the module family at the center of Navitas' AI infrastructure portfolio as the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks.
Impact and signal
Affected components and suppliers
Source and time
Source: EE Journal · 10/23/2026 · View original source
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