Navitas Launches 2300-V SiC Power Module for Grid Infrastructure

What happened

Navitas Semiconductor has introduced the G4H08MT23GB4 family of 2300 V silicon carbide (SiC) full-bridge power modules designed for energy conversion and grid infrastructure, based on the industry-standard SiCPAK™ form factor, featuring an on-state resistance (RDS(on)) of 8 mΩ and built on Navitas' fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) technology. The family extends Navitas' ultra-high-voltage SiC portfolio, which includes 2300 V and 3300 V devices, with target applications including solid-state transformers (SSTs), grid-scale battery energy storage systems, solar inverters, megawatt EV charging infrastructure, and high-voltage DC-DC conversion. The modules incorporate an aluminum nitride (AlN) active-metal-brazed (AMB) substrate for heat spreading and electrical isolation exceeding 5 kV; epoxy-resin potting reduces internal mechanical stress and helps limit moisture and contaminant ingress, and per Navitas the material offers ten times the thermal conductivity of silicone gel. High-current press-fit pins provide twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM) is available. The family is scheduled for qualification under Navitas' AEC-Plus reliability benchmark, which extends testing beyond AEC-Q101 and JEDEC requirements; samples of the G4H08MT23GB4(HC) family, including high-current variants and pre-applied TIM options, are available immediately, and engineers can request the EVB-UHVSIC-GB-E-DPT-1 double-pulse test system. The source does not state pricing or a volume-production timeline.

Impact and signal

Affected components and suppliers

Source and time

Source: Power Electronics News · 10/22/2026 · View original source