CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration
CEA-Leti and STMicroelectronics presented a 3D sequential integration technology for RF front-ends at IEDM 2025. The research demonstrates a path to monolithically integrate SiGe HBTs, RF SOI switches, and high-quality passives on a single wafer. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or production capacity.
- Related manufacturers
- STMicroelectronics
- Impact score
- 12 / 100, low impact