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imec achieves record GaN breakdown exceeding 650V on Shin-Etsu Chemical’s 300mm QST substrate
What happened
imec achieved a record breakdown voltage exceeding 650V on Shin-Etsu Chemical's 300mm QST substrate using a 5µm HEMT device. This sample evaluation marks a significant technical milestone for GaN power devices. Neutral: While this represents a breakthrough in GaN technology, it is currently in the sample evaluation phase and does not immediately impact current supply or pricing.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaNHEMT
imecShin-Etsu Chemical Co Ltd
R&DGaNBreakdown Voltage
Source and time
Source: Semiconductor Today · 11/17/2025 · View original source
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