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ROHM partners with Aixtron to establish in-house GaN epi

What happened

ROHM Semiconductor is partnering with Aixtron to install a G10-GaN MOCVD system at its Hamamatsu plant to produce 8-inch GaN epitaxial wafers for 650V and 100V power devices. This move establishes in-house GaN epitaxy capabilities. Traders should watch for supply stability improvements and potential cost reductions in ROHM's power device portfolio.

Impact and signal

Medium impactImpact score: 60/100

Affected components and suppliers

GaNGaN Power Devices

ROHM SemiconductorAixtron SE

capacity_expansionvertical_integrationGaNMOCVD

Source and time

Source: Semiconductor Today · 6/10/2026 · View original source

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ROHM partners with Aixtron to establish in-house GaN epi

What happened

Impact and signal

Affected components and suppliers

Source and time

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