NuAxiSemiconductor trade intelligence
NTT reports first RF operation of AlGaN transistors with Al-content over 0.75
What happened
NTT presented research at IEDM 2025 demonstrating the first RF operation of AlGaN-channel FETs with aluminum content exceeding 75%, enabling millimeter-wave signal amplification. This is a materials science breakthrough for high-frequency, high-power applications like 6G and satellite communications. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trading dynamics.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
RF TransistorsGaN/SiC Semiconductors
NTT
R&DmilestonemmWave
Source and time
Source: Semiconductor Today · 12/15/2025 · View original source
Open the NuAxi live feed →
Real-time pricing, supply signals and AI analysis for semiconductor traders