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CEA-Leti and ST demo path to fully monolithic silicon RF front-ends with 3D sequential integration
What happened
CEA-Leti and STMicroelectronics presented a 3D sequential integration technology for RF front-ends at IEDM 2025. The research demonstrates a path to monolithically integrate SiGe HBTs, RF SOI switches, and high-quality passives on a single wafer. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or production capacity.
Impact and signal
Low impactImpact score: 12/100
Affected components and suppliers
RF Front-End Modules (FEM)SiGe HBTRF SOI Switches
R&D3D IntegrationRF Technology
Source and time
Source: Semiconductor Today · 12/15/2025 · View original source
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