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RPI-led team demonstrates remote epitaxy with 2–7nm epilayer–substrate distance
What happened
RPI-led team demonstrated remote epitaxy with a 2-7nm epilayer-substrate distance. This technique involves growing high-quality semiconducting films on one substrate and transferring them to another. Neutral: This is a fundamental research milestone with no immediate supply chain impact.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
Rensselaer Polytechnic InstituteNational High Magnetic Field LaboratoryFlorida State UniversitySUNY Buffalo
R&DEpitaxyResearch
Source and time
Source: Semiconductor Today · 11/12/2025 · View original source
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