Micron has announced that G11 will be its first 3D NAND Flash and is actively working on bringing its next-generation G11 NAND technology to production. Its current G9 technology is shipping across Micron's product portfolio with over 200 layers of scaling; as the current technology reaches its limitations, Micron aims with G11 to use wafer-on-wafer 3D NAND stacking to double the capacity of NAND modules, splitting each wafer into a memory cell wafer and one containing peripheral logic circuits, combined via hybrid bonding technology. Micron plans to ship 400-layer NAND in the second half of 2027. The source also notes that Chinese NAND maker YMTC has been making 3D stacked NAND for some time using Xtacking technology. This is a plan, not an achieved result.
At an event this week, Micron announced that its next-generation 3D NAND (G11), which it plans to enter mass production in 2H 2027, is set to offer three significant advantages: doubling storage density (approximately twice the bit density of G9, with 3D TLC going from 21 Gb/mm² to 42 Gb/mm²), increasing I/O performance by up to 50% versus the company's current-generation NAND memory (interface speed from 3,600 MT/s to 5,400 MT/s), and reducing data transfer energy consumption per bit by more than 25%. G11 will adopt wafer-on-wafer bonding, manufacturing the NAND array on a new 3D NAND node and the peripheral circuits and I/O on a logic process before bonding them together, and will transition to more than 400 NAND layers; Micron has not disclosed the exact number of active wordline layers or memory decks. Micron executive Scott DeBoer described G11 as the world's most advanced NAND, ramping in the second half of next year. Micron also expects to disclose more G11 technical details in 2027 and, beyond G11, is developing high-mobility materials and denser cell architectures to continue XYZ scaling; specific architectural details, density targets, or production schedules for post-G11 generations have not been disclosed. These are the company's stated plans and expectations; mass production has not yet occurred.
3D NANDG11 3D NANDMicronTom's HardwareCapacity Change
According to Counterpoint Research, YMTC, known primarily as a NAND Flash manufacturer, has been producing about 5,000 wafers per month of 16 Gb LPDDR5X DRAM running at 7,500 MT/s at its Fab 2 since October 2025. The company is now preparing to begin volume production of LPDDR5X memory with speeds of 9,600 MT/s at its Fab 3, using Vertical Channel Transistor (VCT) 4F² cell structure technology. The volume production remains in the preparation stage and is a planned event.
TrendForce notes that Micron plans to begin mass producing its 1-delta (1δ) nm process in 2027, which is set to succeed its current mainstream 1-gamma (1γ) nm process. Beyond this transition, Micron intends to continue scaling its 6F² architecture before moving directly to 3D DRAM, bypassing the intermediate 4F² architecture; in contrast, South Korean and Chinese DRAM manufacturers still plan to adopt 4F² architecture, highlighting a growing divergence in process technology roadmaps among major suppliers. Micron is also developing memory solutions optimized for AI solutions, including vHBM and vEIM, to compete with SK hynix's 3D HBM and Samsung's zHBM. In NAND flash, Micron is preparing to ramp up production of its G11 generation in 2H27; by incorporating wafer bonding and stacking more than 400 layers, G11 is expected to deliver twice the bit density of G9, alongside a targeted 1.5-fold improvement in I/O speed. TrendForce believes these advances will enable Micron to close the technology gap with Kioxia and YMTC—both early adopters of hybrid bonding architectures—and strengthen its competitive position as NAND performance becomes increasingly critical to an AI-driven market. All of these remain plans/expectations, not yet realized mass production.
1-delta nm DRAM processvHBMvEIMMicronTrendForce Official (Market Data)Capacity Change
Samsung Electronics and SK Hynix are upgrading their NAND flash factories in China to make chips with more than 200 layers, Reuters reported on October 21, citing four people familiar with the plans. According to the report, the move would let the South Korean memory makers win back ground lost to Yangtze Memory Technologies Co (YMTC), even though US curbs on upgrading their China operations remain formally in place. This is a reported plan under way; no completion timeline is given and the US restrictions have not been lifted.
NAND flashSamsung Electronics, SK Hynix and 3 totalDigiTimes AsiaCapacity Change
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Samsung Electronics, SK Hynix, Yangtze Memory Technologies Co (YMTC)
According to Reuters, as AI-driven demand extends from DRAM to NAND and competition from China's YMTC intensifies, Samsung and SK hynix are planning upgrades at their Chinese NAND facilities: Samsung plans to shift its Xi'an plant from roughly 200-layer to 286-layer V9 NAND under an internal project dubbed "Monami"; SK hynix, already authorized to produce up to 240-layer NAND in Dalian, is reportedly planning to upgrade from its current 192-layer technology to 240 layers or more, and may seek U.S. approval for R&D on 300-plus-layer technology. TrendForce estimates China accounts for roughly 30–35% of Samsung's total NAND output and an even higher 40–45% for SK hynix. U.S. export restrictions remain a major hurdle: both chipmakers must obtain annual licenses to install U.S.-made equipment at their Chinese plants, and Washington indicated in 2025 that it would not approve technology upgrades or capacity expansions there; both companies confirmed to Reuters that upgrades were underway in close coordination with Washington but declined to disclose detailed production plans. On competition, YMTC's NAND lineup is dominated by 160- and 232-layer products, it is already producing 294-layer chips in limited volumes and plans to push beyond 300 layers. Separately, per Seoul Economic Daily, Samsung has shifted roughly 60% of its V-NAND capacity to V9 (286 layers), is ramping shipments to NVIDIA, has begun mass production and supply of V10 NAND, and is accelerating development of next-generation V11 targeting around 500 layers; per Bloter, SK hynix is stepping up its shift to 321-layer NAND, which became its largest NAND production segment in 2Q26, with roughly half of its domestic NAND capacity expected to transition to 321-layer products by year-end.
NAND flashSamsung, SK hynix and 3 totalTrendForceCapacity Change
Micron CEO Sanjay Mehrotra forecasts tighter supply-demand conditions in fiscal 2027 and 2028 compared to 2026, citing delayed capacity additions from the 'Big Three' until late 2028. This outlook contradicts previous expectations of gradual supply improvement and suggests a prolonged shortage period driven by infrastructure gaps.
DRAMNAND FlashHBMMicron Technology, Samsung Electronics and 3 totalTrendForceCapacity Change
Chinese DRAM maker CXMT plans to build a 3D NAND R&D line at its second Beijing facility, targeting AI and supercomputing applications. The project is still in the early stages, with no operational timeline or technical details confirmed.
YMTC plans to raise $5 billion via IPO to upgrade facilities and become the world's largest NAND maker by 2027. The company surpassed Samsung and SK hynix in Q2 with 22% YoY shipment growth. This capacity expansion plan signals increased supply, exerting bearish pressure on NAND Flash prices.
NAND FlashYMTC, Samsung Electronics and 3 totalTechPowerUpCapacity Change
YMTC plans an A-share IPO to fund capacity expansion, surpassing Kioxia to become the world's third-largest NAND supplier. This move signals a shift from policy support to global competition. Bearish: Expansion plans suggest future supply increases.
NAND FlashYMTC, Kioxia and 4 totalTrendForce Official (Market Data)Capacity Change
SK Group Chairman expects memory supply tightness to persist through 2030 and plans to double total wafer capacity over the next five years. This move aims to address surging AI demand and strengthen partnerships with TSMC and NVIDIA for next-gen HBM4E. Bullish for memory pricing in the short-to-medium term, though long-term capacity doubling warrants monitoring.
DRAMHBMHBM4ESK hynix, TSMC and 3 totalTrendForceCapacity Change
YMTC is advancing a new fab project with a focus on locally sourced equipment and materials, defying existing sanctions constraints. This expansion signals a potential long-term increase in China's domestic NAND Flash supply capacity. Watch: The move could alter the global supply landscape but its immediate impact on pricing and availability remains uncertain.
YMTC plans to build two new fabs, each with a maximum capacity of 100K wafers per month, with one dedicated to NAND production. The expansion's success hinges on the maturity of China's domestic semiconductor equipment ecosystem, particularly for high-layer (400+) NAND. Bearish: This represents a significant potential increase in NAND supply, contingent on overcoming equipment sourcing challenges.
NAND FlashYangtze Memory Technologies Corp.TrendForce Official (Market Data)Capacity Change
YMTC's third Wuhan fab is expected to start operations in late 2026 with over 50% domestic tooling, and the company plans to build two more fabs of equivalent scale. This expansion will double YMTC's 3D NAND capacity, leveraging its wafer bonding strengths. Bearish: Massive capacity increase will exacerbate supply glut and pressure prices.
3D NANDYMTC, Yangtze Memory TechnologiesTom's HardwareCapacity Change
Yangtze Memory Technologies Corp plans to build two new fabrication plants alongside a nearly completed facility, aiming to more than double its production capacity. This expansion is part of China's broader push to advance its semiconductor industry. Bearish. The significant capacity increase could lead to oversupply and downward pressure on NAND Flash prices.
YMTC plans to add three new fabs, aiming to more than double its total wafer output from 200k to 400k wpm, with the first new fab starting production this year. This expansion, heavily reliant on domestic equipment post-U.S. Entity List restrictions, also includes a strategic push into DRAM production.
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The significant capacity increase in NAND and potential entry into DRAM adds substantial future supply pressure, bearish for global memory pricing.
YMTC plans two additional Wuhan fabs, doubling monthly output to 200,000 wafers with Phase 3 using over 50% domestic equipment. This expansion tests domestic tool viability under U.S. sanctions. Bearish: Capacity growth signals potential oversupply, pressuring NAND and DRAM prices.
YMTC plans to build two new fabs alongside a third nearing completion, aiming to more than double its total NAND flash production capacity to over 500,000 wafers per month. This expansion occurs amid U.S. export restrictions and China's push for semiconductor self-sufficiency, with the company also entering the DRAM market. Bearish: Increased supply from a major market player, despite geopolitical constraints, adds downward pressure on global NAND and DRAM prices.
Dinglong is ramping up high-end photoresist production with support from YMTC, aiming to reduce import reliance. This move is driven by heightened geopolitical tensions and supply chain volatility.
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This could gradually alter the supply landscape for a critical semiconductor material, but immediate price impact is uncertain.