#TrendForce notes that #Micron plans to begin mass producing its 1-delta nm process in 2027, which is set to succeed its current mainstream 1-gamma nm...

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TrendForce notes that Micron plans to begin mass producing its 1-delta (1δ) nm process in 2027, which is set to succeed its current mainstream 1-gamma (1γ) nm process. Beyond this transition, Micron intends to continue scaling its 6F² architecture before moving directly to 3D DRAM, bypassing the intermediate 4F² architecture; in contrast, South Korean and Chinese DRAM manufacturers still plan to adopt 4F² architecture, highlighting a growing divergence in process technology roadmaps among major suppliers. Micron is also developing memory solutions optimized for AI solutions, including vHBM and vEIM, to compete with SK hynix's 3D HBM and Samsung's zHBM. In NAND flash, Micron is preparing to ramp up production of its G11 generation in 2H27; by incorporating wafer bonding and stacking more than 400 layers, G11 is expected to deliver twice the bit density of G9, alongside a targeted 1.5-fold improvement in I/O speed. TrendForce believes these advances will enable Micron to close the technology gap with Kioxia and YMTC—both early adopters of hybrid bonding architectures—and strengthen its competitive position as NAND performance becomes increasingly critical to an AI-driven market. All of these remain plans/expectations, not yet realized mass production.

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Source: TrendForce Official (Market Data) · 10/22/2026 · View original source