[News] Samsung, SK hynix Reportedly Push China NAND Upgrades Beyond 200 Layers as YMTC Competition Heats Up

What happened

According to Reuters, as AI-driven demand extends from DRAM to NAND and competition from China's YMTC intensifies, Samsung and SK hynix are planning upgrades at their Chinese NAND facilities: Samsung plans to shift its Xi'an plant from roughly 200-layer to 286-layer V9 NAND under an internal project dubbed "Monami"; SK hynix, already authorized to produce up to 240-layer NAND in Dalian, is reportedly planning to upgrade from its current 192-layer technology to 240 layers or more, and may seek U.S. approval for R&D on 300-plus-layer technology. TrendForce estimates China accounts for roughly 30–35% of Samsung's total NAND output and an even higher 40–45% for SK hynix. U.S. export restrictions remain a major hurdle: both chipmakers must obtain annual licenses to install U.S.-made equipment at their Chinese plants, and Washington indicated in 2025 that it would not approve technology upgrades or capacity expansions there; both companies confirmed to Reuters that upgrades were underway in close coordination with Washington but declined to disclose detailed production plans. On competition, YMTC's NAND lineup is dominated by 160- and 232-layer products, it is already producing 294-layer chips in limited volumes and plans to push beyond 300 layers. Separately, per Seoul Economic Daily, Samsung has shifted roughly 60% of its V-NAND capacity to V9 (286 layers), is ramping shipments to NVIDIA, has begun mass production and supply of V10 NAND, and is accelerating development of next-generation V11 targeting around 500 layers; per Bloter, SK hynix is stepping up its shift to 321-layer NAND, which became its largest NAND production segment in 2Q26, with roughly half of its domestic NAND capacity expected to transition to 321-layer products by year-end.

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Source and time

Source: TrendForce · 10/20/2026 · View original source