Infineon Advances 300-mm SiC Production

What happened

Infineon Technologies has successfully processed 300-mm silicon carbide (SiC) wafers into functional power devices at its semiconductor fab in Villach, Austria, which the company describes as the first demonstration of functional SiC power devices manufactured on 300 mm wafers in a full-scale semiconductor production environment. The process uses existing silicon manufacturing equipment. Moving from 200 mm to 300 mm wafers offers a potential manufacturing efficiency improvement, as the larger diameter provides approximately 2.3x more chips per wafer; the company calls this an important step towards the future industrialization of 300 mm SiC production and will define the technology roadmap and potential production ramp-up in collaboration with customers and partners, while continuing to implement its existing 200 mm SiC manufacturing plans. Separately, Infineon has demonstrated the feasibility of its Cold Split technology for 300-mm SiC at its Dresden site in Germany, a process that separates wafers from a SiC boule with less material loss and substantially shorter processing times than conventional wire sawing. On 27 October 2026, the company announced an investment of approximately €1.1 billion in a high-volume GaN power semiconductor facility in Villach, based on 300-mm wafers. Infineon will present the first processed 300mm SiC wafer publicly at electronica 2026 in Munich, from 10 to 13 November, at Hall C3, Booth 502.

Impact and signal

Affected components and suppliers

Source and time

Source: Power Electronics News · 11/12/2026 · View original source