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Infineon

NuAxi groups public briefings that mention Infineon: product launches, capacity and pricing signals, and supply-chain changes. The page updates continuously.

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Fri, Oct 30

  1. Impact score 10

    Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, Direct Dielectric Cooling for Power Converters: Power Electronics Week Insights

    Power Electronics News published a roundup of this week's must-read articles covering Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, and Direct Dielectric Cooling for Power Converters. Items include: wafer-level burn-in screens SiC and GaN devices for infant mortality failures before packaging, improving module yields and reliability; direct dielectric cooling brings insulating liquid closer to SiC/GaN devices, shortening thermal paths but complicating insulation design; and WBG device test methodologies covering dynamic characterization, short-circuit ruggedness, thermal cycling, and gate oxide reliability. Other items: Infineon and NVIDIA advance GaN-based intermediate bus converters to improve power density and efficiency in 800 VDC AI data centers; Enphase and Infineon are integrating 900 V GaN bidirectional switches into SST systems designed for AI data center power conversion; Vertical Semiconductor targets $73M in proposed CHIPS funding to advance vertical GaN transistors aimed at improving AI data center power efficiency and density (proposed); Murata developed the world's smallest 008004-inch NTC thermistor, with the NCU01 series maintaining ±1% resistance and B-constant tolerances, initial samples planned for October 2026 and production in 2027; Flex completed the EPC Power acquisition, adding more than 15 GW of deployed power conversion technology and strengthening grid stabilization and backup power capabilities; SemiQ launched 750 V and 1200 V Gen4 SiC MOSFETs. The source is a news roundup and provides no price movement data.

    SiC devicesGaN devicesvertical GaN transistorsInfineon, NVIDIA and 8 totalPower Electronics News
  2. Impact score 30

    Chip Industry Week In Review

    This is a weekly industry roundup listing multiple semiconductor developments: HBM shortages threaten AI expansion; TSMC weighs price hikes (under consideration only, not confirmed); advanced packaging ramps; domain-specialized AI models; Infineon and UMC boost fab investments; Intel's quantum move; Lam and imec advance 3D integration; Google expands TPUs; AI-driven earnings; and CPU benchmarking methodology for agentic AI. The source provides only headline-level mentions, with no specific figures, dates or causes, and does not state implementation status of these items.

    HBMTSMC, Infineon and 7 totalSemiconductor Engineering
  3. Impact score 25

    Infineon’s OktoberTech: Edge AI, SDVs, and the Road to 800 VDC

    An EE Times post presents takeaways from Infineon's OktoberTech event, covering edge AI, software-defined vehicles (SDVs), GaN power, and the shift toward 800 V DC data centers. The source is a summary of event takeaways only; it contains no specific figures, dates, prices, capacity or order data, and does not state any cause.

    edge AISDVGaN powerInfineonEE Times

Wed, Oct 28

  1. Impact score 45

    Enphase, Infineon Develop 900 V GaN Bidirectional Switches

    Enphase Energy and Infineon Technologies have announced the deployment of 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices in Enphase solid-state transformer (SST) power modules, targeting AI data center power infrastructure. Enphase led the system-level development, while Infineon contributes device technology and engineering expertise through its CoolGaN portfolio; Enphase previously introduced 650 V GaN bidirectional switches into volume-production power electronics, and GaN HEMT technology is already used in its IQ9 microinverters. The technology supports Enphase's IQ Solid-State Transformer (IQ SST) platform for AI data centers and can support an 800 V unipolar DC bus instead of split ±400 V rails, and may also enable future 1,500 VDC architectures using split ±750 V generation; the 900 V devices could also benefit commercial solar inverters, supporting three-phase line-to-line designs for 480 V applications in the United States and 400 V applications in other markets. No specific quantities, prices, or timelines are stated. The devices have completed initial testing and are being integrated into IQ SST development builds, with production qualification expected to follow, so further validation is needed before the technology reaches qualified production status.

    900 V GaN monolithic bidirectional switch (BDS)solid-state transformer (SST) power modulesCoolGaNEnphase Energy, Infineon TechnologiesPower Electronics NewsPartnership/M&A
  2. Impact score 40

    Infineon and Enphase develop 900 V GaN switches for AI data centres

    Infineon Technologies is supplying Enphase Energy with 900 V gallium nitride (GaN) bidirectional switches for solid-state transformers used in AI data centre power systems. The companies claim the CoolGaN devices are the world's first monolithic GaN bidirectional switches at this voltage rating, extending the technology into higher-voltage power conversion applications.

    900 V gallium nitride (GaN) bidirectional switchesInfineon Technologies, Enphase EnergyeeNews EuropePartnership/M&A

Tue, Oct 27

  1. Impact score 45

    Infineon and ASMedia team up on end-to-end USB 20Gbps setup for AI cameras

    Infineon Technologies and ASMedia have announced a partnership to speed up the adoption of 20Gbps USB. According to the source, this is driven by demand from machine-learning cameras and other physical AI devices that need to move large amounts of data quickly. The partnership is at the announcement stage only; the source does not state any price, production or timeline information.

    20Gbps USBInfineon Technologies, ASMediaDigiTimes AsiaPartnership/M&A

Mon, Oct 26

  1. Impact score 50

    Infineon to Supply GaN Power Chips for Nvidia’s 800V Data Centers

    Infineon said on Oct. 21 local time that it is expanding its collaboration with Nvidia on 800V direct current (DC) power conversion technology for AI data centers, and will supply gallium nitride (GaN) power semiconductors and control solutions for devices that step down 800V to intermediate voltages used by server boards — high-voltage intermediate bus converters (HV IBCs). The initiative builds on a partnership announced in 2025, which focused on protection circuits for 800V server racks. Infineon supports configurations that step down 800V to 50V, 12V and 6V, and will supply an integrated IBC system solution combining its GaN power semiconductors, PSoC Control C3 controllers and EiceDRIVER product family. Infineon said its technology can achieve switching frequencies of up to 1MHz. Nvidia is developing an architecture that delivers 800V DC directly to server racks, alongside conventional AC and low-voltage DC approaches. The source states that growing GPU power consumption, with per-rack power reaching megawatt levels, is driving interest in 800V DC systems. This is an announced supply arrangement and does not confirm completed shipments or production.

    GaN power semiconductorsHV IBC (high-voltage intermediate bus converters)PSoC Control C3 controllersInfineon, NvidiaThe ElecPartnership/M&A

Fri, Oct 23

  1. Impact score 45

    RT NEWS: #Infineon and #NVIDIA are expanding their collaboration on #GaN-based power solutions for 800V DC AI data centers, paving the way for 1 MW+ r...

    Infineon and NVIDIA are expanding their collaboration on GaN-based power solutions for 800V DC AI data centers, paving the way for 1 MW+ racks; per the source, NVIDIA targets adoption from 2027. The report concerns an expanded collaboration and does not include price changes or capacity figures.

    GaN-based power solutionsInfineon, NVIDIATrendForce Official (Market Data)Partnership/M&A
  2. Impact score 45

    [News] Infineon and NVIDIA Expand GaN Power Collaboration for AI Data Centers

    On October 21, Infineon announced an expanded collaboration with NVIDIA in AI data center power delivery during NVIDIA's GTC developer conference in Berlin. The two companies will jointly develop high-voltage intermediate bus converter (IBC) solutions based on gallium nitride (GaN) power devices for 800V direct current (800V DC) architectures. The expanded collaboration builds on the companies' 800V DC power delivery initiative launched in 2025, focuses on power conversion for high-power AI racks, and will also support hot-swappable server rack maintenance. Leveraging its CoolGaN product portfolio, Infineon will address multiple conversion configurations, including 800V-to-50V and 800V-to-12V, using high-frequency switching technology; the solutions are intended for NVIDIA's MGX open modular reference architecture for AI factories. The power architecture is designed for AI computing systems with power consumption of up to 1 MW per rack, with deployment expected to begin gradually in 2027. Infineon and NVIDIA first announced their collaboration on 800V DC data center power delivery in May 2025, with the initial initiative covering both silicon carbide (SiC) and GaN technologies; the latest expansion places greater emphasis on GaN for intermediate bus conversion. Beyond GaN-based IBCs, Infineon is supplying SiC devices, power protection components, and other power products for NVIDIA's 800V DC ecosystem, covering the power delivery chain from the grid to AI processors. The solutions aim to increase power density, reduce power losses across the delivery chain, and lower cooling hardware requirements, and are also designed to enable controlled pre-charging and discharging of server motherboards as well as hot-swapping while the rack remains operational, helping reduce the risk of service disruptions during data center maintenance.

    GaN power deviceshigh-voltage intermediate bus converter (IBC)800V DC power delivery architectureInfineon, NVIDIATrendForcePartnership/M&A

Thu, Oct 22

  1. Impact score 45

    Infineon, NVIDIA push gallium nitride power for 800-volt AI data centers

    Infineon Technologies said on October 21 that it is expanding its work with Nvidia on 800-volt direct current power architectures for AI data centers, with a focus on gallium nitride (GaN) chips in the intermediate bus converter (IBC). The collaboration remains a planned/ongoing cooperation; the source does not state a timeline, shipment arrangements, or the cause.

    gallium nitride (GaN) chipsintermediate bus converter (IBC)Infineon Technologies, NvidiaDigiTimes AsiaPartnership/M&A
  2. Impact score 40

    Infineon and Wolfspeed Ink Multi-year 200mm SiC Wafer Supply Deal

    Infineon and Wolfspeed have signed a multi-year 200mm SiC wafer supply deal. The agreement shifts Infineon's existing supply relationship with Wolfspeed to larger-diameter substrates for SiC manufacturing. The source does not state deal value, supply volumes, or effective timing.

    200mm SiC waferSiC substrateInfineon, WolfspeedEE Times AsiaPartnership/M&A

Wed, Oct 21

  1. Impact score 50

    Infineon, Wolfspeed pivot to 8-inch SiC to cut costs and meet rising AI power demand

    Infineon Technologies and US-based silicon carbide (SiC) leader Wolfspeed announced on October 15 a new multi-year supply agreement for 8-inch SiC wafers. The deal transitions their existing supply partnership from 6-inch to 8-inch substrate technology, positioning both companies to meet future demand across electric vehicles (EVs), renewable energy systems, and AI data center power infrastructure. The source states the move is intended to cut costs and meet rising AI power demand; the agreement is announced, and the source does not state whether the transition to 8-inch has been implemented or completed.

    8-inch SiC wafers6-inch SiC substratesInfineon Technologies, WolfspeedDigiTimes AsiaPartnership/M&A

Tue, Oct 20

  1. Impact score 30

    AdapTronics wins Infineon’s humanoid robotics startup challenge

    AdapTronics from Italy has won the Infineon Startup Challenge 2026 focused on key technologies for humanoid robots. AdapTronics won with an innovative gripping technology for humanoid robots. COSMOKE of South Korea was runner up with its magnetic tactile sensing technology COSKIN for physical AI, which enables humanoid robots to perceive touch, pressure, and physical interactions; TECHiFAB from Germany came third with an In-Memory Computing based approach to real-time motor control for robotic actuators. More than 100 startups from 29 countries participated, with 15 selected to pitch at the Infineon Startup Challenge Demo Day held during EBSCON in Graz, Austria. As the winner, AdapTronics will join the Infineon Startup Co-Innovation Program to further develop and scale its solution together with Infineon, with the collaboration officially kicking off at the Startup Night in Munich in November.

    humanoid robotsInfineonElectronics Weekly
  2. Impact score 20

    Mouser New Product Insider: Over 5,000 New Parts Added in Third Quarter of 2026

    In a New Product Insider item published October 19, 2026, Mouser Electronics announced that in the third quarter of 2026 (July through September) it introduced, as an authorized global distributor, more than 5,000 new part numbers ready for shipment. Highlighted quarterly introductions include: Renesas Electronics RZ/G3SE series 64-bit general-purpose MPUs for IoT Edge applications (up to four Arm Cortex-A55 cores at up to 1.2 GHz plus a 200 MHz Cortex-M33 coprocessor); Semtech LR2021EVK2XxS1 evaluation kits based on the LR2021 LoRa Plus RF transceiver, covering 868MHz, 915MHz, 2.4GHz, S-band and L-band for satellite communications and offered in North America (915 MHz), Europe (868 MHz) and Asia (490 MHz) variants, each with two LoRa Plus RF boards and two XIAO modules based on Nordic Semiconductor's nRF54L SoC; Infineon Technologies XENSIV TLx49012 magnetic angle sensors (automotive TLE49012 and industrial TLI49012, with SPI, ABZ, PWM and UVW interfaces); and Banner Engineering S100 series multitouch displays. Mouser states its customers can expect 100% certified, genuine products fully traceable to their manufacturers. The source does not state the cause (this is a catalog-update item with no price or supply-demand event).

    RZ/G3SE Quad Core MicroprocessorsLR2021 LoRa Plus RF transceiverXENSIV TLx49012 Magnetic Angle SensorsMouser Electronics, Inc., Renesas Electronics and 6 totalElectronics Sourcing

Mon, Oct 19

  1. Impact score 40

    Infineon expands PSOC Control C3 family with secure MCUs for motor and power control

    Infineon Technologies has expanded its PSOC Control C3 microcontroller family with the new PSC3M/P6 series, combining multi-motor control, power conversion capabilities and advanced security in a single device. The new MCUs can control up to four brushless DC motors while supporting post-quantum cryptography (PQC) requirements. The launch targets European developers of industrial drives, robotics, and renewable (list truncated in source). No pricing or availability timing details are stated in the source.

    microcontrollers (MCUs)PSOC Control C3 microcontroller familyPSC3M/P6 seriesInfineon TechnologieseeNews Europe
  2. Impact score 45

    Infineon extends Wolfspeed wafer deal to 8-inch silicon carbide

    Infineon Technologies has lined up 8-inch silicon carbide (SiC) wafers from Wolfspeed under an expanded and extended long-term supply agreement. The deal gives the German chipmaker another source of the larger substrates it needs to convert its SiC fabs, and gives the US materials supplier a commitment from a top-tier customer about a year after its financial restructuring.

    8-inch silicon carbide (SiC) wafersInfineon Technologies, WolfspeedDigiTimes AsiaPartnership/M&A

Fri, Oct 16

  1. Impact score 45

    Infineon secures 200mm SiC wafer supply deal with Wolfspeed

    Infineon Technologies has signed a multi-year agreement with Wolfspeed to secure supplies of 200mm silicon carbide (SiC) wafers, supporting its shift to larger-diameter manufacturing. The deal builds on a 20-year relationship between the two companies and moves their existing wafer supply arrangement from 150mm to 200mm substrates.

    200mm silicon carbide (SiC) wafers150mm substratesInfineon Technologies, WolfspeedeeNews EuropePartnership/M&A
  2. Impact score 0

    Infineon and Wolfspeed hook up on SiC wafers

    Infineon and Wolfspeed have signed a multi-year supply agreement for 200mm SiC wafers to replace 150mm wafers.

    SiC wafersInfineon, WolfspeedElectronics WeeklyPartnership/M&A

Thu, Oct 15

  1. Impact score 45

    Infineon secures 200mm SiC wafer supply from Wolfspeed

    Infineon has signed a multi-year agreement with Wolfspeed for the supply of 200mm silicon carbide (SiC) wafers, moving the companies' existing supply relationship from 150mm to 200mm substrates. According to an Infineon press release, the agreement supports Infineon's conversion from 150mm to 200mm SiC manufacturing. Infineon sources SiC substrates from several suppliers for its global manufacturing network, which includes its 200mm SiC fab in Kulim, Malaysia, and says this multi-source strategy is meant to secure both flexibility and quality of supply. Infineon COO Alexander Gorski said the agreement further broadens the company's supply base for its 200-millimeter high-volume manufacturing, building on a 20-year supply relationship between the two companies. Moving to larger wafers is largely a question of cost: a 200mm wafer provides more usable die area than a 150mm wafer, which lowers the substrate cost per unit and improves overall manufacturing efficiency. Demand for SiC power semiconductors comes mainly from electric vehicle drivetrains, solar inverters and industrial motor drives, and Infineon also points to AI datacenters as an emerging demand driver. Neither company has disclosed the value of the agreement or the volumes involved.

    200mm silicon carbide (SiC) wafersSiC substratesSiC power semiconductorsInfineon, WolfspeedEvertiqPartnership/M&A

Mon, Oct 12

  1. Impact score 10

    Infineon 27 kW PSU targets next-generation AI server racks

    Infineon Technologies has introduced a 27 kW three-phase power supply unit (PSU) reference design for next-generation AI servers, addressing the growing power demands of high-density GPU racks. The design supports the industry's transition towards 800 VDC and ±400 VDC power architectures while meeting the requirements of the Open Compute Project (OCP) Open Rack V3 specification.

    27 kW three-phase power supply unit (PSU) reference designInfineon TechnologieseeNews Europe