Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, Direct Dielectric Cooling for Power Converters: Power Electronics Week Insights

What happened

Power Electronics News published a roundup of this week's must-read articles covering Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, and Direct Dielectric Cooling for Power Converters. Items include: wafer-level burn-in screens SiC and GaN devices for infant mortality failures before packaging, improving module yields and reliability; direct dielectric cooling brings insulating liquid closer to SiC/GaN devices, shortening thermal paths but complicating insulation design; and WBG device test methodologies covering dynamic characterization, short-circuit ruggedness, thermal cycling, and gate oxide reliability. Other items: Infineon and NVIDIA advance GaN-based intermediate bus converters to improve power density and efficiency in 800 VDC AI data centers; Enphase and Infineon are integrating 900 V GaN bidirectional switches into SST systems designed for AI data center power conversion; Vertical Semiconductor targets $73M in proposed CHIPS funding to advance vertical GaN transistors aimed at improving AI data center power efficiency and density (proposed); Murata developed the world's smallest 008004-inch NTC thermistor, with the NCU01 series maintaining ±1% resistance and B-constant tolerances, initial samples planned for October 2026 and production in 2027; Flex completed the EPC Power acquisition, adding more than 15 GW of deployed power conversion technology and strengthening grid stabilization and backup power capabilities; SemiQ launched 750 V and 1200 V Gen4 SiC MOSFETs. The source is a news roundup and provides no price movement data.

Impact and signal

Affected components and suppliers

Source and time

Source: Power Electronics News · 10/30/2026 · View original source