Infineon processes first 300 mm SiC wafers into working power devices

What happened

Infineon has processed 300 mm silicon carbide (SiC) wafers into functional power devices at its fab in Villach, Austria, using existing silicon manufacturing equipment, and says it is the first to do so in a full-scale semiconductor fab. According to an Infineon press release, a 300 mm wafer gives about 2.3 times as many chips as a 200 mm wafer. The company has not set a timeline for volume production; it will plan the technology and ramp-up of 300 mm SiC together with customers and partners while continuing its existing roadmap for 200 mm SiC. In parallel, Infineon has demonstrated the feasibility of its Cold Split technology on 300 mm SiC at its site in Dresden, Germany; the method separates wafers from a SiC boule with less material loss and much shorter processing time than conventional wire sawing. At the end of October, the company announced an investment of about EUR 1.1 billion in a high-volume plant for GaN power semiconductors on 300 mm wafers in Villach. Infineon does not say what the step means for costs.

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Source: Evertiq · 11/10/2026 · View original source