NuAxi Stream - Real-Time Semiconductor Intelligence

Mon, Apr 25

23:11Impact score 15
Wolfspeed’s silicon carbide power modules used in inverters of Lucid Air EV
Wolfspeed has secured a multi-year supply agreement to provide its silicon carbide power modules for the Lucid Air electric vehicle. This partnership highlights the growing adoption of SiC technology in the high-performance EV segment. Neutral: This is a design win confirming long-term demand for Wolfspeed's SiC products but does not indicate an immediate change in supply, demand, or pricing for the broader component market.
SiC Power ModulesWolfspeed IncSemiconductor TodayPartnership/M&A

Wed, Apr 20

18:06Impact score 8
Nippon Sanso’s first Ga2O3 MOCVD system installed and qualified
Taiyo Nippon Sanso Corp (TNSC) has installed and qualified its first gallium oxide (Ga2O3) MOCVD system in a university research lab. This is an R&D milestone for a next-generation wide-bandgap semiconductor material with potential for power devices. Neutral: This is a long-term technology development with no immediate impact on commercial supply, demand, or pricing for existing electronic components.
Ga2O3 substratesPower SemiconductorsTaiyo Nippon Sanso CorpSemiconductor TodayTechnical

Tue, Apr 19

20:16Impact score 10
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BluGlass Ltd has raised A$3.71 million through a non-renounceable entitlement offer, following a separate A$3.4 million placement to institutional investors. The company specializes in RPCVD technology for manufacturing optoelectronic devices like laser diodes and micro-LEDs. Neutral: This capital raise funds ongoing R&D and operations but does not indicate an immediate shift in component supply, demand, or pricing relevant to traders.
laser diodesLEDmicro-LEDBluGlass LtdSemiconductor TodayFinancial/Earnings

Wed, Apr 6

16:38Impact score 10
5G a significant market opportunity for GaN
IDTechEx's report identifies the transition to higher frequency bands in 5G as a significant market opportunity for GaN-based RF power devices. The current 5G rollout has primarily utilized lower frequencies similar to 4G, but future deployments will require GaN's performance advantages. Neutral: This is a long-term technology trend analysis with no immediate, quantifiable impact on trading prices or supply.
GaN RF Power DevicesSemiconductor TodayMarket Analysis

Tue, Apr 5

17:42Impact score 8
IRPS ‘best paper’ award for ST/CNR-IMM work on silicon carbide power devices
A joint team from STMicroelectronics and CNR-IMM won the 2021 IRPS 'best paper' award for research correlating epitaxial defects with breakdown in 4H-SiC MOSFETs. The work identifies specific defect types that impact device reliability and yield. Neutral: This is a long-term R&D milestone with no immediate impact on supply, pricing, or trading decisions for SiC components.
SiC MOSFETSTMicroelectronicsSemiconductor TodayTechnical
16:42Impact score 20
SemiQ launches 1200V 80mΩ SiC power MOSFET modules in SOT-227 packages
SemiQ has launched its second-generation 1200V 80mΩ SiC power MOSFET modules in SOT-227 packages, including variants with and without a parallel diode. This is a portfolio expansion for the company, which also manufactures SiC epiwafers. Neutral: This is a standard product launch that does not indicate a change in supply, demand, or pricing for the broader SiC component market.
SiC MOSFETSemiQSemiconductor TodayProduct Launch

Mon, Apr 4

18:15Impact score 45
BluGlass completes acquisition of Silicon Valley laser diode fab
BluGlass Ltd has completed the acquisition of a 19,000 sq ft laser diode production facility in Silicon Valley for US$2.5 million. This move expands the company's manufacturing footprint for its proprietary RPCVD-based laser diodes. Watch: The acquisition could potentially increase future supply capacity for specialized laser diodes, but the immediate market impact is uncertain.
Laser DiodeBluGlass LtdSemiconductor TodayPartnership/M&A

Fri, Apr 1

00:15Impact score 10
Odyssey demos 700V vertical GaN power FETs; targets 1200V next
Odyssey Semiconductor announced a technology milestone, demonstrating 700V vertical GaN power FETs and targeting 1200V devices next. This is an R&D achievement for a small, development-stage company in the high-voltage power semiconductor space. Neutral: This is a long-term technology development with no immediate impact on supply, demand, or pricing for commercial power components.
GaN Power FETsOdyssey Semiconductor TechnologiesSemiconductor TodayTechnical

Mon, Mar 28

19:11Impact score 55
Showa Denko enters mass production of 6-inch SiC single-crystal substrates
Showa Denko has commenced mass production of 6-inch silicon carbide (SiC) single-crystal wafers. This expansion is driven by rapidly rising demand for power semiconductors in electric vehicles, rail, and industrial equipment. Bearish: The increase in substrate supply capacity could alleviate long-term supply constraints and exert downward pressure on SiC wafer pricing.
SiC SubstratesSiC Power SemiconductorsShowa Denko K.K.Semiconductor TodayCapacity Change

Fri, Mar 25

19:59Impact score 15
Luminus launches Generation 4 high-density COBs with Robusto technology
Luminus Devices has launched its Generation 4 high-lumen-density white COB LED arrays featuring Robusto technology, which improves maximum operating temperature. This is a routine product refresh targeting the illumination market. Neutral: This launch is unlikely to cause immediate supply/demand shifts or price movements for electronic components relevant to traders.
LED COB ArraysLuminus Devices IncSemiconductor TodayProduct Launch

Thu, Mar 24

21:26Impact score 20
ROHM starts production of 150V GaN HEMTs with 8V gate-source voltage
ROHM has commenced production of its new GNE10xxTB series of 150V GaN HEMTs, featuring an industry-leading 8V gate-source voltage rating. This product is targeted at power supply circuits for industrial equipment, data centers, and IoT communication devices. Neutral: This is a standard product launch that does not indicate an immediate shift in supply, demand, or pricing for existing power semiconductor components.
GaN HEMTPower TransistorsROHMSemiconductor TodayProduct Launch
20:43Impact score 45
BluGlass acquiring US laser fab for $2.5m
BluGlass Ltd is acquiring a 19,000 sq ft laser diode production facility in Fremont, CA, for $2.5M ($2M cash, $0.5M shares). The move aims to fast-track the company's growth and increase its laser manufacturing capacity. Watch: This acquisition could alter the supply landscape for specialized laser diodes in the medium term, but the immediate trading impact is uncertain.
laser diodeBluGlass LtdSemiconductor TodayPartnership/M&A

Tue, Mar 22

23:10Impact score 10
MICLEDI collaborating with GlobalFoundries on manufacturing micro-LED displays for AR glasses
Fabless micro-LED developer MICLEDI announced a manufacturing collaboration with GlobalFoundries to produce micro-LED arrays for AR glasses. The partnership aims to improve brightness, resolution, and power efficiency to enable consumer-grade AR devices. Neutral: This is a long-term R&D milestone with no immediate impact on component supply, pricing, or trader decisions.
micro-LED displaysMICLEDI Microdisplays B.V., GlobalFoundriesSemiconductor TodayTechnical
01:09Impact score 8
Sandia reports GaN diode with record 6.4kV breakdown ultrafast devices step to protecting the grid from EMPs
Sandia National Labs has demonstrated a vertical GaN p-n diode with a record 6.4kV breakdown voltage, designed for ultrafast surge protection in grid applications. This is a research milestone aimed at developing future devices capable of handling up to 20,000V to protect against EMPs. Neutral: This is a lab-stage R&D result with no immediate impact on commercial GaN supply, demand, or pricing for traders.
GaN Power DevicesPower SemiconductorsSemiconductor TodayTechnical

Mon, Mar 21

19:01Impact score 20
Infineon launches optimized 650V CoolSiC MOSFETs
Infineon Technologies has launched a new family of 650V CoolSiC MOSFETs in a D2PAK 7-pin package targeting high-power applications like EV charging and servers. This is a standard product refresh within their existing trench technology portfolio. Neutral: This launch does not indicate a change in supply, demand, or pricing for existing SiC components; it is a routine product update.
SiC MOSFETInfineon Technologies AGSemiconductor TodayProduct Launch
18:50Impact score 20
Cambridge GaN Devices debuts first commercial products
Fabless firm Cambridge GaN Devices (CGD) launched its first commercial product portfolio, the ICeGaN 650V H1 series, claiming up to 50% reduction in power losses. The launch marks the company's commercial debut after emerging from stealth mode. Neutral: This is a new market entrant and product introduction, but with no immediate data on volume, pricing, or supply chain impact, it does not signal a direct trading action for existing components.
GaN Power ICs650V Power SemiconductorsCambridge GaN Devices LtdSemiconductor TodayProduct Launch

Wed, Mar 16

19:53Impact score 15
EPC releases lowest on-resistance rad-hard transistor available for demanding space applications
EPC has launched the EPC7019, a radiation-hardened GaN FET with a 40V rating, 1.5mΩ on-resistance, and over 1Mrad total dose tolerance for space applications. This is a technology milestone offering improved performance in a small footprint for a highly specialized, low-volume market. Neutral: This is a niche product launch with no immediate, broad impact on commercial component supply, demand, or pricing.
Radiation-Hardened GaN FETEfficient Power Conversion Corp (EPC), EPC Space LLCSemiconductor TodayProduct Launch
03:09Impact score 45
Wolfspeed adds to global operations leadership team to support rapid company growth
Wolfspeed has hired Jeff Ferraro as VP of enterprise supply chain & procurement to support its rapid growth. This move aims to strengthen operational leadership as the company scales production of SiC and GaN semiconductors for high-demand markets like EVs and 5G. Neutral: This is a management change aimed at improving execution, not a direct signal of immediate supply or price changes.
SiC SubstratesSiC Power DevicesGaN RF DevicesWolfspeed IncSemiconductor TodayPartnership/M&A

Tue, Mar 15

19:31Impact score 10
Toyoda Gosei makes record diameter GaN substrates, targeting next-gen power devices
Toyoda Gosei, in collaboration with Osaka University, has successfully developed larger-diameter gallium nitride (GaN) substrates, a key material for next-generation power semiconductors. This technical milestone leverages the company's existing expertise in GaN-based LEDs. Neutral: This is a long-term R&D development with no immediate impact on GaN device supply, pricing, or trader decisions.
GaN Power DevicesToyoda Gosei Co LtdSemiconductor TodayTechnical

Thu, Mar 10

05:24Impact score 15
EPC and Analog Devices collaborate to deliver up to 2MHz switching frequency for high-density DC-DC converters
EPC and Analog Devices have launched the EPC9160 reference design board, a dual-output synchronous buck converter operating at up to 2MHz, converting 9-24V input to 3.3-5V output and delivering up to 15A per channel. This collaboration aims to showcase high-density power conversion capabilities using EPC's eGaN FETs. Neutral: This is a technology demonstration and reference design launch with no immediate, direct impact on supply, demand, or pricing for trading.
GaN FETsDC-DC ConvertersEfficient Power Conversion Corp (EPC), Analog DevicesSemiconductor TodayProduct Launch

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Mon, Apr 25

Wolfspeed’s silicon carbide power modules used in inverters of Lucid Air EV

Wed, Apr 20

Nippon Sanso’s first Ga2O3 MOCVD system installed and qualified

Tue, Apr 19

<new>

Wed, Apr 6

5G a significant market opportunity for GaN

Tue, Apr 5

IRPS ‘best paper’ award for ST/CNR-IMM work on silicon carbide power devices

SemiQ launches 1200V 80mΩ SiC power MOSFET modules in SOT-227 packages

Mon, Apr 4

BluGlass completes acquisition of Silicon Valley laser diode fab

Fri, Apr 1

Odyssey demos 700V vertical GaN power FETs; targets 1200V next

Mon, Mar 28

Showa Denko enters mass production of 6-inch SiC single-crystal substrates

Fri, Mar 25

Luminus launches Generation 4 high-density COBs with Robusto technology

Thu, Mar 24

ROHM starts production of 150V GaN HEMTs with 8V gate-source voltage

BluGlass acquiring US laser fab for $2.5m

Tue, Mar 22

MICLEDI collaborating with GlobalFoundries on manufacturing micro-LED displays for AR glasses

Sandia reports GaN diode with record 6.4kV breakdown ultrafast devices step to protecting the grid from EMPs

Mon, Mar 21

Infineon launches optimized 650V CoolSiC MOSFETs

Cambridge GaN Devices debuts first commercial products

Wed, Mar 16

EPC releases lowest on-resistance rad-hard transistor available for demanding space applications

Wolfspeed adds to global operations leadership team to support rapid company growth

Tue, Mar 15

Toyoda Gosei makes record diameter GaN substrates, targeting next-gen power devices

Thu, Mar 10

EPC and Analog Devices collaborate to deliver up to 2MHz switching frequency for high-density DC-DC converters

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