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Toyoda Gosei makes record diameter GaN substrates, targeting next-gen power devices
What happened
Toyoda Gosei, in collaboration with Osaka University, has successfully developed larger-diameter gallium nitride (GaN) substrates, a key material for next-generation power semiconductors. This technical milestone leverages the company's existing expertise in GaN-based LEDs. Neutral: This is a long-term R&D development with no immediate impact on GaN device supply, pricing, or trader decisions.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN Power Devices
Toyoda Gosei Co Ltd
substrateR&Dmanufacturing
Source and time
Source: Semiconductor Today · 3/15/2022 · View original source
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