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Sandia reports GaN diode with record 6.4kV breakdown ultrafast devices step to protecting the grid from EMPs
What happened
Sandia National Labs has demonstrated a vertical GaN p-n diode with a record 6.4kV breakdown voltage, designed for ultrafast surge protection in grid applications. This is a research milestone aimed at developing future devices capable of handling up to 20,000V to protect against EMPs. Neutral: This is a lab-stage R&D result with no immediate impact on commercial GaN supply, demand, or pricing for traders.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
GaN Power DevicesPower Semiconductors
R&Dgrid-protectionhigh-voltage
Source and time
Source: Semiconductor Today · 3/21/2022 · View original source
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