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IRPS ‘best paper’ award for ST/CNR-IMM work on silicon carbide power devices

What happened

A joint team from STMicroelectronics and CNR-IMM won the 2021 IRPS 'best paper' award for research correlating epitaxial defects with breakdown in 4H-SiC MOSFETs. The work identifies specific defect types that impact device reliability and yield. Neutral: This is a long-term R&D milestone with no immediate impact on supply, pricing, or trading decisions for SiC components.

Impact and signal

Low impactImpact score: 8/100

Affected components and suppliers

SiC MOSFET

STMicroelectronics

R&Dreliability

Source and time

Source: Semiconductor Today · 4/5/2022 · View original source

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IRPS ‘best paper’ award for ST/CNR-IMM work on silicon carbide power devices

What happened

Impact and signal

Affected components and suppliers

Source and time

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