NuAxiSemiconductor trade intelligence
ST and Sanan creating 200mm SiC device fab JV in China
What happened
STMicroelectronics and Sanan Optoelectronics have agreed to create a new 200mm silicon carbide device manufacturing joint venture in Chongqing, China. This move aims to secure a localized supply of SiC devices for the Chinese market, leveraging Sanan's existing SiC substrate production. Bearish: This JV represents a significant capacity addition, potentially easing long-term supply constraints and putting downward pressure on SiC device pricing.
Impact and signal
Medium impactImpact score: 58/100
Affected components and suppliers
SiC MOSFETSiC Power Device
STMicroelectronicsSanan Optoelectronics Co Ltd
capacity-expansionjoint-venturechina-fab
Source and time
Source: Semiconductor Today · 6/7/2023 · View original source
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