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Odyssey demos 700V vertical GaN power FETs; targets 1200V next

What happened

Odyssey Semiconductor announced a technology milestone, demonstrating 700V vertical GaN power FETs and targeting 1200V devices next. This is an R&D achievement for a small, development-stage company in the high-voltage power semiconductor space. Neutral: This is a long-term technology development with no immediate impact on supply, demand, or pricing for commercial power components.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

GaN Power FETs
Odyssey Semiconductor Technologies
rd-milestoneganpower-semiconductors

Source and time

Source: Semiconductor Today · 3/31/2022 · View original source

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