Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V
Toshiba Electronic Devices & Storage Corporation has launched twelve 650V third-generation SiC Schottky barrier diodes, now shipping in volume for industrial applications. The new devices feature a forward voltage of 1.2V and target efficiency-critical uses like EV chargers and PV inverters. Neutral: This is a standard product launch expanding the SiC portfolio; it does not indicate a supply shock or immediate demand shift for existing components.
- Related manufacturers
- Toshiba Electronic Devices & Storage Corporation
- Impact score
- 20 / 100, low impact