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Mitsubishi Electric develops SBD-embedded SiC-MOSFET with new structure for power modules

What happened

Mitsubishi Electric announced a new SBD-embedded SiC-MOSFET structure and began shipping samples of its 3.3kV full-SiC power module on May 31. The technology targets railway traction and DC power systems, aiming to improve energy efficiency and system downsizing. Neutral: This is a long-term R&D milestone with no immediate impact on supply, demand, or pricing of existing power semiconductor components.

Impact and signal

Low impactImpact score: 20/100

Affected components and suppliers

SiC-MOSFETSiC Power Module

Mitsubishi Electric Corp

FMF 800 DC-66 BEW

new-productSiCpower-semiconductor

Source and time

Source: Semiconductor Today · 6/8/2023 · View original source

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Mitsubishi Electric develops SBD-embedded SiC-MOSFET with new structure for power modules

What happened

Impact and signal

Affected components and suppliers

Source and time

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