NuAxiSemiconductor trade intelligence
Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V
What happened
Toshiba Electronic Devices & Storage Corporation has launched twelve 650V third-generation SiC Schottky barrier diodes, now shipping in volume for industrial applications. The new devices feature a forward voltage of 1.2V and target efficiency-critical uses like EV chargers and PV inverters. Neutral: This is a standard product launch expanding the SiC portfolio; it does not indicate a supply shock or immediate demand shift for existing components.
Impact and signal
Low impactImpact score: 20/100
Affected components and suppliers
SiC Schottky Barrier Diodes
Toshiba Electronic Devices & Storage Corporation
product-launchSiCindustrial
Source and time
Source: Semiconductor Today · 7/13/2023 · View original source
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