NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 23

22:11Impact score 10
Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter
On October 23, 2026, Microchip Technology (Nasdaq: MCHP) announced the launch of the POL-05-20S-T, a radiation-tolerant Point-of-Load (POL) converter designed for the demanding power requirements of space processing applications. The device uses Gallium Nitride (GaN) power devices to deliver up to 20A of output current, in a compact 25g surface-mount package measuring 1.51” x 1.51” x 0.45”. It has a wide input range of 4.75V to 13.2V and an adjustable 0.7V to 5V output, and is designed for high-current, fast-transient applications such as core voltage rails of FPGAs, microcontrollers, ASICs and other processing-intensive digital loads. Electrical parameters are specified before and after irradiation up to a Total Ionizing Dose (TID) of 50 krad, it is characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 43 MeV·cm²/mg, and it operates from −55°C to +100°C at full load. The POL-05-20S-T is now available in production quantities and can be purchased directly from Microchip or via sales representatives or authorized worldwide distributors. The source does not state the cause (this is a product launch, so no cause is applicable).
radiation-tolerant GaN Point-of-Load (POL) converterMicrochip TechnologyElectronics Sourcing
22:00Impact score 15
The Wafer Is the New Battleground: Soitec CPO René Jonker on Building AI from the Substrate Up
In an interview at SEMICON West 2026, Soitec Chief Product Officer René Jonker discussed the company, which was spun out of CEA-Leti in 1992 around the Smart Cut process. Soitec now runs five main technology platforms: RF-SOI (used in RF switches and low-noise amplifiers in practically every 5G phone and Wi-Fi module), FD-SOI (used in automotive radar, IoT microcontrollers and edge devices, often cutting power by 30 to 50 percent without a node shrink), Power-SOI (high-voltage automotive and industrial circuits), POI (acoustic RF filters for 5G and 6G), and Photonics-SOI, developed a decade ago and now the platform carrying the company. Jonker said Photonics-SOI is 'now seen as the new gold'; as AI cluster connectivity pushes traffic from copper to fiber, it is driving Soitec's business 'with a very impressive growth rate' and underpins the co-packaged optics now coming into AI data centers. The article notes that Soitec trades on Euronext Paris and that an investor who put $100 into its stock in January 2026 was holding more than $600 by early October. On competition, Jonker said direct competition comes mostly from GlobalWafers, which 'has or used to have access to our IP,' while technology-level competition includes FD-SOI customers who could choose FinFET at TSMC, and a trade-off between silicon and indium phosphide for optical waveguides. SmartSiC (lowering the cost of SiC power devices for EV inverters) and RF-GaN on insulator (in development for 6G power amplifiers and aerospace) remain in development, and FD-SOI is moving to smaller geometries.
Photonics-SOIRF-SOIFD-SOISoitecSemiWiki
21:50Impact score 30
Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency
Navitas Semiconductor (Nasdaq: NVTS) announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK form factor and has a class-leading RDS(ON) (8 mΩ). It was developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure, enabled by Navitas' fourth-generation GeneSiC Trench-Assisted Planar (TAP) architecture; the launch extends Navitas' 2300 V and 3300 V ultra-high voltage SiC portfolio. The modules use an aluminum nitride (AlN) active-metal-braze (AMB) substrate supporting isolation capability of over 5 kV, epoxy-resin potting technology delivering 10x improvements in thermal conductivity versus silicone gel, high-current press-fit pins with twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM). The new module family will be qualified to Navitas' AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements and includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing, more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R), implements extended power-cycling and temperature-cycling testing, and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices. The announcement places the module family at the center of Navitas' AI infrastructure portfolio as the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks.
ultra-high-voltage (UHV) SiC power module familyfourth-generation GeneSiC Trench-Assisted Planar (TAP) architectureNavitas SemiconductorEE Journal
21:34Impact score 60
MicroVision Begins Commercial Production of MOVIA(TM) Pro for Superior Short-Range Sensing and Onboard Perception, Enabling Physical AI at the Edge
MicroVision, Inc. (NASDAQ: MVIS) announced the commercial production launch of MOVIA™ Pro and is shipping sensors to meet customer demand. MOVIA Pro is the company's next-generation short-range lidar sensor and the production-ready version of MOVIA S, featuring onboard perception, multi-echo sensing, and an integrated processing architecture that lets perception software run directly on the sensor via MicroVision's Open Software Framework. The company's Orlando-based production facility is manufacturing MOVIA Pro to meet increasing demand; CEO Glen DeVos said customers are progressing from evaluating prototypes to launching commercial programs. The sensor targets applications including intelligent infrastructure, unmanned aerial systems, warehouse and industrial automation (AMRs, AGVs, forklift ADAS), security and defense, and selected automotive uses. No price or volume figures were provided in the announcement.
MOVIA Pro short-range lidar sensorMicroVision, Inc. (NASDAQ: MVIS)EE JournalCapacity Change
21:00Impact score 55
US to provide up to $389 million in CHIPS awards to 4 firms
The US Department of Commerce announced the signing of four letters of intent to provide up to USD 389 million in federal R&D awards under the CHIPS and Science Act (reported October 23, 2026). Under the final awards, each company will conduct R&D to address critical projects spanning power semiconductor devices, modules and materials essential to the semiconductor supply chain. Helion will receive up to USD 175 million to develop, scale and establish domestic capabilities in high-voltage power semiconductors and advanced energy power modules for high-peak-current pulsed-power applications in fusion power generation. Commonwealth Fusion Systems will receive up to USD 85 million for R&D on semiconductors for radio-frequency plasma heating, power electronics, embedded electronics for fusion diagnostics, and radiation-hardened electronics. Vertical Semiconductor will receive up to USD 73 million to advance its vertical GaN power semiconductors, enabling more efficient and compact power delivery for advanced computing. Sibelco will receive up to USD 56 million to develop next-generation purification and finishing technologies for ultra-high-purity quartz used in crystal growth crucibles and other hardware. This is an announcement of signed letters of intent for R&D funding, a policy development to be watched for any price impact.
power semiconductor devicespower semiconductor modulesvertical GaN power semiconductorsHelion, Commonwealth Fusion Systems and 4 totalEvertiqPolicy/Regulation
21:00Impact score 20
Leveraging the FinFET Structure for Power: Applications and Use Cases
This is a technical overview (background) article discussing the roles of the FinFET structure and vertical GaN in high-power electronics (industrial, EVs, AI data centers); it contains no price or supply-demand movement. Key points: FinFETs are moving from logic to the power path, with foundries such as GlobalFoundries offering FinFET processes; Empower Semiconductor (now part of Analog Devices) developed its FinFast platform around ultra-fast FinFET-based power transistors; Claros (now part of Navitas) announced it will manufacture its integrated voltage regulators (IVRs) on Samsung Foundry's US-based 14-nm FinFET process. According to Empower, its Crescendo IVRs achieve roughly 20x faster transient response than conventional solutions; by paralleling up to 50 IVRs of roughly 60 A each, more than 3,000 A can be supplied to the load, with 2x lower voltage droop, which the company says yields an additional 15% reduction in xPU power for a typical AI workload. In May 2026, Analog Devices said it had entered a definitive agreement to buy Empower Semiconductor for $1.5 billion in cash, and the acquisition closed in July 2026. On vertical GaN: in 2024 Power Integrations acquired Odyssey Semiconductor's assets to develop vertical-conduction GaN FETs with 650 V and 1,200 V blocking voltages; onsemi introduced its proprietary GaN-on-GaN vertical architecture (vGaN), saying it reduces energy loss by almost 50%, manufactured at its fab in Syracuse, NY, acquired from NexGen Power Systems at the end of 2024; in October 2025, MIT spin-out Vertical Semiconductor raised an $11 million seed round led by Playground Global, demonstrated its vertical GaN process for 100 V to 1.2 kV device classes on 8-inch wafers, and hopes to have a fully integrated product out by the end of the year. The source does not state any cause related to price impact or market supply-demand.
FinFET-based power transistors (IVRs)vertical GaN power transistorsintegrated voltage regulators (IVRs)Analog Devices, Empower Semiconductor and 10 totalPower Electronics News
15:04Impact score 75
First chip-level device on the list: US FCC bans two devices with Huawei HiSilicon chips under new rule
The US Federal Communications Commission (FCC) has banned two electronic devices from entering the US market because both contain surveillance chips made by Huawei's HiSilicon. The move marks the first time the FCC has used a new rule targeting devices whose chipmakers are deemed national security risks; the source does not state further implementation details.
Huawei HiSilicon surveillance chipsHuawei HiSiliconDigiTimes AsiaPolicy/Regulation
13:13Impact score 60
Washington takes stake in fusion company
Washington took a 1.13% stake in Helion for a $175 million Chips Act grant and $50 million private investment, totaling $225 million. The award supports U.S. development and transition to manufacturing next-generation, high-voltage semiconductors, with $100 million for R&D in Everett, Washington, and $80 million for tooling in Burlington, Vermont.
next-generation, high-voltage semiconductorsadvanced semiconductorspower module manufacturing capabilityHelionElectronics WeeklyPolicy/Regulation
13:02Impact score 25
Mouser signs ControlByWeb
Mouser has signed a new global distribution agreement with ControlByWeb, a manufacturer of industrial IoT controllers for remote monitoring, control and data acquisition. The platform has optional cloud and cellular connectivity for secure edge-to-enterprise deployments. Mouser will be stocking an array of products, including: the X-410 edge programmable I/O controllers (with four relays, four digital inputs, and one temperature input), a series that includes the Wi-Fi-enabled X-410W and cellular-enabled X-410CW; the X-401 dual relay and input modules (two SPDT Form C relays and two optically isolated inputs), part of CBW's 400 Series, with a Wi-Fi variant (X-401W) and a cellular variant (X-401CW); the WebRelay single relay and input modules with optional Wi-Fi or cellular connectivity; and the WebRelay-Quad web-controlled four-relay modules, available with Wi-Fi or cellular connectivity. The source does not state the cause (this is a channel partnership event with no price or supply change cause).
industrial IoT controllersedge programmable I/O controllersdual relay and input modulesMouser, ControlByWebElectronics WeeklyPartnership/M&A
08:32Impact score 60
PSMC eyes Taiwan, Japan, Singapore for 3D AI foundry expansion
Powerchip Semiconductor Manufacturing (PSMC) is urgently expanding its 3D AI foundry business, evaluating new plants in Taiwan, Singapore, and Japan, while exploring strategic joint ventures with customers. Its product portfolio includes integrated passive devices (IPDs), interposers, wafer-on-wafer (WoW) technology, and post-wafer finish (PWF) services; as AI server power consumption rises, demand for IPDs is expected to remain visible through 2028. The expansion is at the planning stage, with no construction or volume-production facts reported.
3D AI foundryintegrated passive devices (IPDs)interposersPowerchip Semiconductor Manufacturing (PSMC)DigiTimes AsiaCapacity Change
06:49Impact score 55
Mobilint to Develop Computing Platform for Physical AI
On Oct. 22, Mobilint said it will develop a computing platform for physical AI applications, including humanoid robots. The company has been selected as the lead research organization for a project to develop on-device AI accelerators for humanoids, part of the Ministry of Trade, Industry and Resources' K-On-Device AI Semiconductor Technology Development Program, overseen by the Korea Planning & Evaluation Institute of Industrial Technology (KEIT). Mobilint will design a neural processing unit (NPU) to accelerate AI computing for humanoids, ultimately aims to develop an accelerator module that can be installed directly in robots, and will also develop a software environment for optimizing AI models. The completed platform will undergo phased validation and improvement through integration with LG Electronics' humanoid system designed for everyday environments. Mobilint plans to expand the technology beyond humanoids into other physical AI applications, including service robots, autonomous mobile robots (AMRs), smart home appliances and AI cameras.
on-device AI acceleratorneural processing unit (NPU)accelerator moduleMobilint, LG ElectronicsThe Elec
00:30Impact score 45
[News] Infineon and NVIDIA Expand GaN Power Collaboration for AI Data Centers
On October 21, Infineon announced an expanded collaboration with NVIDIA in AI data center power delivery during NVIDIA's GTC developer conference in Berlin. The two companies will jointly develop high-voltage intermediate bus converter (IBC) solutions based on gallium nitride (GaN) power devices for 800V direct current (800V DC) architectures. The expanded collaboration builds on the companies' 800V DC power delivery initiative launched in 2025, focuses on power conversion for high-power AI racks, and will also support hot-swappable server rack maintenance. Leveraging its CoolGaN product portfolio, Infineon will address multiple conversion configurations, including 800V-to-50V and 800V-to-12V, using high-frequency switching technology; the solutions are intended for NVIDIA's MGX open modular reference architecture for AI factories. The power architecture is designed for AI computing systems with power consumption of up to 1 MW per rack, with deployment expected to begin gradually in 2027. Infineon and NVIDIA first announced their collaboration on 800V DC data center power delivery in May 2025, with the initial initiative covering both silicon carbide (SiC) and GaN technologies; the latest expansion places greater emphasis on GaN for intermediate bus conversion. Beyond GaN-based IBCs, Infineon is supplying SiC devices, power protection components, and other power products for NVIDIA's 800V DC ecosystem, covering the power delivery chain from the grid to AI processors. The solutions aim to increase power density, reduce power losses across the delivery chain, and lower cooling hardware requirements, and are also designed to enable controlled pre-charging and discharging of server motherboards as well as hot-swapping while the rack remains operational, helping reduce the risk of service disruptions during data center maintenance.
GaN power deviceshigh-voltage intermediate bus converter (IBC)800V DC power delivery architectureInfineon, NVIDIATrendForcePartnership/M&A

Thu, Oct 22

23:30Impact score 50
[News] South Korea’s LX Semicon Sells More Than 60 Patents, Marking its Exits from SiC Market
South Korean chipmaker LX Semicon has announced the sale of its silicon carbide (SiC)-related patents, marking its formal exit from the SiC market. According to disclosed information, the company is selling a portfolio of more than 60 patents covering SiC power semiconductor devices and epitaxial wafers, with an expected sale price of less than KRW 1 billion; the patents cover SiC MOSFET technologies (including planar and trench-gate structures, termination and gate-pad designs) as well as epitaxial wafer technologies, span South Korea, the United States, China's mainland, Europe, Japan, and Taiwan, and some remain valid until 2045. The patents are being sold to a South Korean power semiconductor company, although specific transaction details have not been disclosed. As to causes: industry observers point to stagnant electric vehicle demand, which has slowed growth in the SiC market and dampened near-term return expectations; since Lee Yoon-tae took over as CEO in late 2023, the company has shifted focus to core businesses and streamlined operations through asset disposals, having already downsized its SiC R&D team in 2024; financial pressure added urgency, as annual revenue declined for three consecutive years, falling from KRW 2.1193 trillion in 2022 to KRW 1.6391 trillion in 2025, and in the first half of 2026 revenue dropped 7.6% year on year while operating profit plunged 39%, with display driver ICs (DDIs) still accounting for more than 86% of total revenue. The sale marks the final step of LX Semicon's retreat from SiC, following its earlier liquidation of its power device joint venture with Japan's Sanken Electric.
SiC power semiconductor devicesSiC epitaxial wafersSiC MOSFETLX SemiconTrendForce
23:06Impact score 25
Efficient LC displays for industrial and Ex/ATEX applications
DISPLAY VISIONS introduces/presents its EA DOG series of particularly energy-efficient chip-on-glass LCDs for industrial equipment, measuring systems and controls, with exceptionally low current consumption from just 150 µA. This low power consumption makes the modules suitable for battery-powered devices, mobile measurement systems and energy-efficient controls, and can support the development of equipment required to comply with ATEX requirements for potentially explosive environments, with typical applications including mining, the chemical industry and environments with explosive gas or dust atmospheres. The product range includes text displays from 1×8 to 4×20 characters and graphic displays with resolutions from 102×64 to 240×128 pixels; developers can choose from 12 different display sizes from 1.7 to 3.9 inches, combine them with white, blue, amber, yellow-green or RGB backlights, and optionally equip the displays with a touch panel. The modules have SPI and I²C interfaces, operate at 3.3 V DC, and the chip-on-glass technology enables flat, space-saving designs; the series' long-term availability ensures investment and planning security for industrial products with long life cycles.
chip-on-glass LCDDISPLAY VISIONSElectronics Sourcing
23:00Impact score 30
Navitas Launches 2300-V SiC Power Module for Grid Infrastructure
Navitas Semiconductor has introduced the G4H08MT23GB4 family of 2300 V silicon carbide (SiC) full-bridge power modules designed for energy conversion and grid infrastructure, based on the industry-standard SiCPAK™ form factor, featuring an on-state resistance (RDS(on)) of 8 mΩ and built on Navitas' fourth-generation GeneSiC™ Trench-Assisted Planar™ (TAP) technology. The family extends Navitas' ultra-high-voltage SiC portfolio, which includes 2300 V and 3300 V devices, with target applications including solid-state transformers (SSTs), grid-scale battery energy storage systems, solar inverters, megawatt EV charging infrastructure, and high-voltage DC-DC conversion. The modules incorporate an aluminum nitride (AlN) active-metal-brazed (AMB) substrate for heat spreading and electrical isolation exceeding 5 kV; epoxy-resin potting reduces internal mechanical stress and helps limit moisture and contaminant ingress, and per Navitas the material offers ten times the thermal conductivity of silicone gel. High-current press-fit pins provide twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM) is available. The family is scheduled for qualification under Navitas' AEC-Plus reliability benchmark, which extends testing beyond AEC-Q101 and JEDEC requirements; samples of the G4H08MT23GB4(HC) family, including high-current variants and pre-applied TIM options, are available immediately, and engineers can request the EVB-UHVSIC-GB-E-DPT-1 double-pulse test system. The source does not state pricing or a volume-production timeline.
2300 V silicon carbide (SiC) full-bridge power modulesNavitas SemiconductorPower Electronics News
22:48Impact score 62
Micron skipping planned NAND generation
At a technology and product webinar held on October 21 on its Investor Relations website, Micron announced it is skipping a planned NAND generation, accelerating its 3D NAND technology roadmap to provide additional die capacity, speed and energy efficiency faster. According to Blocks & Files, published Thursday 22 Oct 2026 at 15:48 UTC, Micron is currently shipping G9, its ninth generation with 276 layers; the first product using this tech, the 2650 client SSD, launched in July 2024. President and Chief Technology and Products Officer Scott DeBoer said Micron will go from Gen 9 directly to Gen 11, describing the memory as optimized for the AI products of the future. Compared to G9, G11 has twice the bit density, up to 1.5x higher I/O speed and needs 25 percent less energy to transfer a bit; it is based on wafer-on-wafer bonding technology, will exceed 400 layers, and will ramp in the second half of next year, with more specifics promised next year closer to launch. The publication's bootnote notes that Gen 8 (planned 300+ layers, branded G10 externally) was abandoned in Oct 2026, with Gen 9 (planned 400+ layers) branded G11 externally in Oct 2026. DeBoer also outlined future product directions possibly using G11: a high-IOPS SLC-based, small-block AI-class NAND (in the 25–100 million IOPS area) and a high-bandwidth AI-class NAND with TSV-connected stacked layers placed near the accelerator, with next-generation SSDs holding up to 512 TB. Additionally, per BNP Paribas analyst Karl Ackerman, Micron's HBM4 36GB 12-high entered high-volume manufacturing in March 2026, HBM4E is currently sampling with key customers, with targets of HBM4E HVM in 2027, HBM5 in 2028, HBM5E in 2029 and HBM6 in 2030, plus newly announced vHBM and vEIM lines targeted for volume production in 2028. As to the cause, Micron says the skip is intended to provide additional die capacity, speed and energy efficiency faster, with G11 optimized for future AI products; the publication separately offers its own opinion that the generation skipping is marketing-based and a response to Samsung, SK hynix and Sandisk/Kioxia generation naming, which is media commentary rather than a Micron statement.
3D NANDNANDSSDMicronBlocks & FilesEOL/Discontinuation
21:55Impact score 40
STMicroelectronics adds MasterGaN7 devices to integrated high-efficiency power family
STMicroelectronics has extended its MasterGaN integrated transistor/driver family with new MasterGaN7 devices that contain 650V enhancement-mode GaN transistors with a 6A maximum current rating. The new series targets applications such as power adapters, chargers, industrial lighting equipment, and solar microinverters, helping designers boost efficiency and power density. MasterGaN7 connects the two 650V GaN transistors in half-bridge configuration with a high-voltage, high-frequency gate driver in a QFN package that shares its pinout and footprint with other MasterGaN devices; it introduces low drop-out (LDO) regulators to stabilize the gate-drive voltage and features a pin-driven shut-down mode with ultra-fast wakeup to minimize no-load power consumption. The new devices offer 45ns propagation delay and can operate at switching frequencies of up to 2MHz, requiring only small external magnetic and passive components to minimize circuit footprint, lower BOM costs, and maximize power density; an integrated bootstrap diode supplies the high-side driver. All MasterGaN devices support topologies including active clamp flyback, asymmetrical half bridge, inverse buck, resonant LLC, power factor correction (PFC) converters, and DC-to-AC inverters, with protection including interlocking against cross-conduction, undervoltage lock-out (UVLO), and thermal shutdown. The source does not state pricing or availability timing.
MasterGaN7STMicroelectronicsEE Journal
21:00Impact score 55
Teradyne Targets Edge AI Test Costs With UltraFLEXplus S Series
Teradyne announced on October 12, 2026 the introduction of the UltraFLEXplus S series, extending its semiconductor test platform to address the manufacturing economics of edge artificial intelligence. The series begins with the UltraFLEXplus S24, a 24-slot system intended for engineering and production testing. Target customers include integrated device manufacturers and outsourced semiconductor assembly and test providers managing diverse products and fluctuating production volumes. According to Teradyne, the S series shares the Q series' instrument module ecosystem, IG-XL software environment, and test program library, and supports testing at three temperatures for devices serving automotive, industrial, and consumer applications. The S24 specifically targets microcontrollers, multimedia processors, and edge AI devices. The article notes that compatibility may let customers reuse test programs that must be developed, debugged, and validated before production, and that a compact tester could help manufacturers add suitable capacity within an existing building, though the actual benefit depends on each device and configuration, the complete test cell and factory layout, and whether it translates into stronger adoption will depend on demonstrated customer economics.
microcontrollersmultimedia processorsedge AI devicesTeradyneSemiWiki
20:09Impact score 60
Semtech secures dedicated SiGe capacity at Tower
Semtech will invest in dedicated silicon germanium (SiGe) capacity at Tower Semiconductor under an expanded multi-year agreement. The capacity spans Tower's fabs in the US, Israel and Japan and will support Semtech's growing business in optical and copper interconnect components for AI data centres. The two companies have worked together for 20 years; Semtech's signal integrity products, including transimpedance amplifiers (TIAs), modulator and laser drivers and linear equalisers, are built on Tower's SiGe process technology and are used in optical transceivers and active copper cables. According to the companies, spreading the capacity across three regions gives Semtech better supply security and geographic diversification; the agreement builds on current production and comes as Semtech expects demand for its SiGe-based products to grow across more customer programmes and end markets. The companies also work together on a joint technology roadmap for future interconnect generations. The companies have not disclosed the size of Semtech's investment or how much capacity it secures.
silicon germanium (SiGe) capacitysignal integrity productstransimpedance amplifiers (TIAs)Semtech, Tower SemiconductorEvertiqCapacity Change
20:00Impact score 85
Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift
On 22 October 2026, Micron announced it will abandon future 4F² DRAM after roughly two decades of research. The company says the architecture offers no meaningful density advantages, increases manufacturing complexity and costs, and has fundamental scaling limitations; CTO Scott DeBoer said capacitor pitch, not nominal transistor area, determines DRAM bit density, and that 4F² has no sustainable scaling path beyond a certain point, with 3D DRAM ultimately coming in instead. Micron acknowledges 4F² is technically feasible and that it has manufactured experimental devices based on the architecture. A 4F² cell theoretically occupies about 33% less area than a 6F² cell and could theoretically increase memory cells per wafer by 50%, but Micron argues these theoretical advantages do not necessarily translate into higher density in practice. Micron plans to continue scaling conventional 6F² DRAM by reducing capacitor pitch and shrinking process nodes; its upcoming 1δ process technology is scheduled to enter volume production in the second half of 2027 with a mid-20% improvement in bit density compared with its predecessor, and Micron plans to adopt High-NA EUV lithography for future DRAM generations. The company is also developing multiple generations of 3D DRAM production nodes but has not disclosed when the new architecture will enter commercial production. According to TechInsights, both Samsung and SK hynix still have 4F² memory cells in their roadmaps.
DRAMMicronTom's HardwareEOL/Discontinuation

Analog	$0.68	−5.9%
Connector	$0.75	+0.2%
CPU	$386.74	−21.3%
DDR4	$88.40	−0.2%
DDR52026-W13	$14.89	−11.2%
GPU	$478.20	+8.2%
MCU	$0.68	−61.7%Unusual
MLCC	$0.01	+54.0%Unusual
MOSFET	$0.12	−82.8%Unusual
PMIC2026-W13	$0.44	−12.5%
SSD/HDD	$288.43	n/a

NuAxi Stream - Real-Time Semiconductor Intelligence

Fri, Oct 23

Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter

The Wafer Is the New Battleground: Soitec CPO René Jonker on Building AI from the Substrate Up

Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency

MicroVision Begins Commercial Production of MOVIA(TM) Pro for Superior Short-Range Sensing and Onboard Perception, Enabling Physical AI at the Edge

US to provide up to $389 million in CHIPS awards to 4 firms

Leveraging the FinFET Structure for Power: Applications and Use Cases

First chip-level device on the list: US FCC bans two devices with Huawei HiSilicon chips under new rule

Washington takes stake in fusion company

Mouser signs ControlByWeb

PSMC eyes Taiwan, Japan, Singapore for 3D AI foundry expansion

Mobilint to Develop Computing Platform for Physical AI

[News] Infineon and NVIDIA Expand GaN Power Collaboration for AI Data Centers

Thu, Oct 22

[News] South Korea’s LX Semicon Sells More Than 60 Patents, Marking its Exits from SiC Market

Efficient LC displays for industrial and Ex/ATEX applications

Navitas Launches 2300-V SiC Power Module for Grid Infrastructure

Micron skipping planned NAND generation

STMicroelectronics adds MasterGaN7 devices to integrated high-efficiency power family

Teradyne Targets Edge AI Test Costs With UltraFLEXplus S Series

Semtech secures dedicated SiGe capacity at Tower

Micron pulls the plug on future 4F² DRAM after two decades of research in dramatic shift

Chip Teardown Lab2 opened

Component price indexNPI, vs. prior period

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