NuAxiSemiconductor trade intelligence

STMicroelectronics adds MasterGaN7 devices to integrated high-efficiency power family

What happened

STMicroelectronics has extended its MasterGaN integrated transistor/driver family with new MasterGaN7 devices that contain 650V enhancement-mode GaN transistors with a 6A maximum current rating. The new series targets applications such as power adapters, chargers, industrial lighting equipment, and solar microinverters, helping designers boost efficiency and power density. MasterGaN7 connects the two 650V GaN transistors in half-bridge configuration with a high-voltage, high-frequency gate driver in a QFN package that shares its pinout and footprint with other MasterGaN devices; it introduces low drop-out (LDO) regulators to stabilize the gate-drive voltage and features a pin-driven shut-down mode with ultra-fast wakeup to minimize no-load power consumption. The new devices offer 45ns propagation delay and can operate at switching frequencies of up to 2MHz, requiring only small external magnetic and passive components to minimize circuit footprint, lower BOM costs, and maximize power density; an integrated bootstrap diode supplies the high-side driver. All MasterGaN devices support topologies including active clamp flyback, asymmetrical half bridge, inverse buck, resonant LLC, power factor correction (PFC) converters, and DC-to-AC inverters, with protection including interlocking against cross-conduction, undervoltage lock-out (UVLO), and thermal shutdown. The source does not state pricing or availability timing.