NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Feb 5

19:03Impact score 10
APC chooses Luminus as worldwide sales channel and go-to-market partner
APC Electronics has appointed Luminus Devices as its exclusive worldwide sales channel and go-to-market partner for its wide-bandgap power semiconductor products. This is a distribution agreement aimed at expanding market reach, not a manufacturing or supply chain event. Neutral: This partnership does not directly alter supply, demand, or pricing dynamics for power semiconductors in the near term.
Wide-Bandgap Power SemiconductorsAPC Electronics, Luminus Devices IncSemiconductor TodayPartnership/M&A

Mon, Feb 3

16:39Impact score 10
Teradyne and Infineon partner on power semiconductor testing
Teradyne and Infineon have formed a strategic partnership focused on advancing power semiconductor test capabilities. The collaboration aims to develop new test methodologies for next-generation power devices, including silicon carbide (SiC) and gallium nitride (GaN). Neutral: This is a long-term R&D and process improvement initiative with no immediate impact on component supply, pricing, or trader inventory decisions.
Power SemiconductorsTeradyne Inc, Infineon Technologies AGSemiconductor TodayTechnical

Wed, Jan 29

17:00Impact score 55
Indichip to construct $1.4bn silicon carbide fab
Indichip Semiconductors has signed an MoU to build a $1.4 billion silicon carbide (SiC) fab in Andhra Pradesh, India. This represents a significant long-term capacity addition in the SiC supply chain, a key material for electric vehicles and power electronics. Bearish: The announcement signals increased future supply for SiC wafers and devices, potentially easing long-term pricing pressure.
Silicon Carbide (SiC) WafersSiC Power DevicesIndichip Semiconductors LtdSemiconductor TodayCapacity Change
00:18Impact score 15
Luminus adds red and blue multi-mode lasers
Luminus Devices has expanded its portfolio with new multi-mode red and blue lasers for projection, lighting, and materials processing applications. This is a routine product line extension by a specialized manufacturer in the solid-state lighting sector. Neutral: The launch is unlikely to cause immediate supply-demand shifts or price impacts for traders, as it represents incremental technology development rather than a major capacity or market event.
Multi-mode Laser DiodesLuminus Devices IncSemiconductor TodayProduct Launch

Fri, Jan 24

18:15Impact score 45
MACOM signs preliminary memorandum of terms for US CHIPS Act funding
MACOM has signed a preliminary agreement for CHIPS Act funding, positioning it to receive US government support for its RF, microwave, and optical semiconductor production. This funding aims to bolster domestic manufacturing of critical technologies for commercial and defense applications. Watch: This signals potential long-term capacity and R&D investment in specialized analog/RF components, but the direct, near-term trading impact on supply and pricing is uncertain.
RFMicrowaveAnalogMACOM Technology Solutions IncSemiconductor TodayPolicy/Regulation

Thu, Jan 23

19:33Impact score 5
StratEdge partners with Vitale Engineering as manufacturer’s representative for Upstate New York
StratEdge Corp has appointed Vitale Engineering as its exclusive manufacturer's representative for Upstate New York, expanding its sales channel for advanced semiconductor packaging services. This move aims to increase market penetration in the aerospace, telecom, and defense sectors. Neutral: This is a routine sales channel expansion with no immediate, quantifiable impact on component supply, demand, or pricing.
RF/Microwave PackagingHigh-Speed Digital PackagingStratEdge CorpSemiconductor TodayPartnership/M&A
03:03Impact score 25
Wolfspeed launches Gen 4 MOSFET technology platform
Wolfspeed has launched its Gen 4 SiC MOSFET technology platform, designed to improve durability and efficiency while reducing system cost and development time. The platform covers a roadmap for power modules, discrete components, and bare die products in 750V, 1200V, and 2300V classes. Neutral: This is a long-term technology roadmap announcement with no immediate impact on supply, demand, or pricing of existing components.
SiC MOSFETWolfspeed Inc.Semiconductor TodayProduct Launch

Wed, Jan 22

17:37Impact score 15
Element Six unveils copper diamond composite to power advanced semiconductor devices
Element Six launched a copper-diamond composite material at Photonics West 2025, targeting thermal management in AI, HPC, and GaN RF devices. This is a technology announcement for a new material solution, not a report on market events. Neutral: This is a long-term R&D development with no immediate impact on semiconductor supply, demand, or pricing.
Thermal Management MaterialsAdvanced Packaging SubstratesElement SixSemiconductor TodayTechnical

Thu, Jan 16

02:17Impact score 58
Wolfspeed completes $200m at-the-market equity offering
Wolfspeed has completed a $200 million at-the-market (ATM) equity offering, selling shares directly into the open market. This capital raise is typically used to fund operations or expansion without a single large buyer. Bearish: The offering increases share count (dilution) and signals the company is raising capital from equity markets, which traders may view as a sign of financial pressure or a lack of cheaper funding options, potentially putting downward pressure on the stock.
SiC WafersSiC Power DevicesWolfspeed Inc.Semiconductor TodayFinancial/Earnings

Wed, Jan 15

03:40Impact score 60
MACOM unveils five-year, $345m plan to expand 100mm GaN and GaAs production and introduce 150mm GaN
MACOM announced a five-year, $345 million capital investment plan to modernize and expand its 100mm GaN and GaAs wafer fabs in the US, while introducing 150mm GaN production. This expansion aims to increase supply for RF, microwave, and analog applications. Bearish: The significant, long-term capacity increase for GaN/GaAs RF components could alleviate supply constraints and exert downward pressure on future prices.
GaN RFGaAs RFMACOM Technology Solutions Inc.Semiconductor TodayCapacity Change

Tue, Jan 14

21:24Impact score 10
High-breakdown-voltage P-GaN gate HEMTs with threshold voltage of 7.1V
Shandong University researchers have developed a P-GaN gate HEMT with a significantly increased threshold voltage of 7.1V and improved breakdown voltages. This is a laboratory-stage R&D achievement focused on device physics and reliability, not a commercial product announcement. Neutral: This academic paper has no immediate impact on supply, demand, or pricing for trading purposes.
GaN HEMTPower SemiconductorsSemiconductor TodayTechnical

Fri, Jan 10

21:49Impact score 10
Plessey and Meta develop brightest red micro-LED display for AR glasses
Plessey Semiconductors and Meta have developed a red micro-LED display for AR glasses, claiming a brightness of up to 6,000,000 nits at high resolution (<5μm) with ultra-low power consumption. This R&D milestone addresses a key technical challenge for next-generation AR/MR devices. Neutral: This is a long-term technology development with no immediate impact on component supply, demand, or pricing for traders.
micro-LEDPlessey Semiconductors LtdSemiconductor TodayTechnical
00:20Impact score 8
imec reports first full wafer-scale fabrication of electrically pumped GaAs-based nano-ridge lasers on 300mm silicon
Research center imec has demonstrated the first full 300mm wafer-scale fabrication of electrically pumped GaAs-based nano-ridge lasers on silicon, achieving room-temperature lasing with threshold currents as low as 5mA. This is a significant R&D milestone in monolithic integration of III-V materials on silicon for optical interconnects. Neutral: This is a long-term research development with no immediate impact on component supply, pricing, or trading decisions.
III-V on Silicon LasersOptical InterconnectsimecSemiconductor TodayTechnical

Thu, Jan 9

23:01Impact score 60
Teledyne Imaging Sensors places repeat order for Riber MBE 412 cluster system
Teledyne Imaging Sensors placed a repeat order for a Riber MBE 412 cluster system for delivery in 2025 to expand its production capacity for high-performance infrared devices. This indicates sustained demand and planned output growth for specialized infrared components used in defense and aerospace. Bullish: This capacity expansion, driven by fulfilling new contracts, signals tight supply and strong future demand for high-end infrared sensors, potentially supporting prices.
Infrared SensorsFocal Plane ArraysTeledyne Imaging Sensors, RiberSemiconductor TodayCapacity Change

Wed, Jan 8

18:07Impact score 15
Aehr receives initial FOX-XP system order from GaN power semi supplier
Aehr Test Systems received an initial production order from a top-tier automotive supplier for its FOX-XP wafer-level test and burn-in system for GaN power devices. The system is scheduled for immediate shipment, indicating a ramp in production readiness for GaN semiconductors in the automotive sector. Neutral: This is a background capital equipment order with no immediate, direct impact on component supply, pricing, or trader inventory decisions.
GaN Power SemiconductorsAehr Test SystemsSemiconductor TodayTechnical

Wed, Dec 18

00:27Impact score 15
X-FAB launches next-gen silicon carbide process platform for power MOSFET designs
X-FAB has launched its next-generation XSICM03 silicon carbide process platform for power MOSFETs, featuring a reduced cell pitch to improve die per wafer and on-state resistance. This is a technology development from a specialty foundry, not a major volume producer in the SiC power market. Neutral: This R&D milestone has no immediate impact on supply, demand, or pricing for SiC components traded in the spot market.
SiC MOSFETX-FAB Silicon Foundries SESemiconductor TodayTechnical

Tue, Dec 10

20:03Impact score 15
ROHM and TSMC collaborating on development and volume production of GaN power devices for EVs
ROHM and TSMC have announced a strategic partnership for the development and volume production of GaN power devices targeting electric vehicle applications. This collaboration aims to combine ROHM's power semiconductor expertise with TSMC's foundry capacity to meet growing EV demand. Neutral: This is a long-term R&D and capacity alignment with no immediate impact on trading dynamics for existing components.
GaN Power DevicesROHM Co Ltd, Taiwan Semiconductor Manufacturing Co (TSMC)Semiconductor TodayPartnership/M&A
02:23Impact score 10
Imec integrates InP chiplet on 300mm RF silicon interposer, yielding 0.1dB insertion loss at 140GHz
Imec presented research demonstrating the integration of InP chiplets on a 300mm RF silicon interposer with only 0.1dB insertion loss at 140GHz. This is a technical milestone for developing compact, energy-efficient modules for above-100GHz applications like 6G and radar. Neutral: This is a long-term R&D development with no immediate impact on component supply, demand, or pricing for traders.
RF Silicon InterposerInP ChipletsImecSemiconductor TodayTechnical

Mon, Dec 9

21:03Impact score 10
Advantest announces KGD test cell for power semiconductors
Advantest has launched an integrated Known Good Die (KGD) test cell combining its CREA MT series power device testers with a new HA1100 die prober, targeting yield improvement for wide-bandgap power semiconductors. This is an equipment announcement focused on enhancing testing efficiency for a specific, high-growth semiconductor segment. Neutral: This is a capital equipment development with no immediate, direct impact on component supply, demand, or pricing for traders.
Power SemiconductorsWide-Bandgap (WBG) DevicesAdvantest CorpSemiconductor TodayTechnical

Fri, Dec 6

23:31Impact score 15
Navitas showcasing GaN and SiC technologies at CES 2025
Navitas Semiconductor is showcasing its GaN and SiC power semiconductor technologies at CES 2025, targeting applications in AI data centers, EVs, and mobile devices. The event is a promotional platform for demonstrating technology advancements and potential future products. Neutral: This is a standard marketing event with no immediate impact on supply, demand, or pricing for electronic components.
GaN Power ICsSiC Power DevicesNavitas Semiconductor CorpSemiconductor TodayProduct Launch

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NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, Feb 5

APC chooses Luminus as worldwide sales channel and go-to-market partner

Mon, Feb 3

Teradyne and Infineon partner on power semiconductor testing

Wed, Jan 29

Indichip to construct $1.4bn silicon carbide fab

Luminus adds red and blue multi-mode lasers

Fri, Jan 24

MACOM signs preliminary memorandum of terms for US CHIPS Act funding

Thu, Jan 23

StratEdge partners with Vitale Engineering as manufacturer’s representative for Upstate New York

Wolfspeed launches Gen 4 MOSFET technology platform

Wed, Jan 22

Element Six unveils copper diamond composite to power advanced semiconductor devices

Thu, Jan 16

Wolfspeed completes $200m at-the-market equity offering

Wed, Jan 15

MACOM unveils five-year, $345m plan to expand 100mm GaN and GaAs production and introduce 150mm GaN

Tue, Jan 14

High-breakdown-voltage P-GaN gate HEMTs with threshold voltage of 7.1V

Fri, Jan 10

Plessey and Meta develop brightest red micro-LED display for AR glasses

imec reports first full wafer-scale fabrication of electrically pumped GaAs-based nano-ridge lasers on 300mm silicon

Thu, Jan 9

Teledyne Imaging Sensors places repeat order for Riber MBE 412 cluster system

Wed, Jan 8

Aehr receives initial FOX-XP system order from GaN power semi supplier

Wed, Dec 18

X-FAB launches next-gen silicon carbide process platform for power MOSFET designs

Tue, Dec 10

ROHM and TSMC collaborating on development and volume production of GaN power devices for EVs

Imec integrates InP chiplet on 300mm RF silicon interposer, yielding 0.1dB insertion loss at 140GHz

Mon, Dec 9

Advantest announces KGD test cell for power semiconductors

Fri, Dec 6

Navitas showcasing GaN and SiC technologies at CES 2025

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