NuAxiSemiconductor trade intelligence
imec reports first full wafer-scale fabrication of electrically pumped GaAs-based nano-ridge lasers on 300mm silicon
What happened
Research center imec has demonstrated the first full 300mm wafer-scale fabrication of electrically pumped GaAs-based nano-ridge lasers on silicon, achieving room-temperature lasing with threshold currents as low as 5mA. This is a significant R&D milestone in monolithic integration of III-V materials on silicon for optical interconnects. Neutral: This is a long-term research development with no immediate impact on component supply, pricing, or trading decisions.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
III-V on Silicon LasersOptical Interconnects
imec
R&Dtechnology-milestonesilicon-photonics
Source and time
Source: Semiconductor Today · 1/9/2025 · View original source
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