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High-breakdown-voltage P-GaN gate HEMTs with threshold voltage of 7.1V
What happened
Shandong University researchers have developed a P-GaN gate HEMT with a significantly increased threshold voltage of 7.1V and improved breakdown voltages. This is a laboratory-stage R&D achievement focused on device physics and reliability, not a commercial product announcement. Neutral: This academic paper has no immediate impact on supply, demand, or pricing for trading purposes.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN HEMTPower Semiconductors
R&Dtechnology-milestone
Source and time
Source: Semiconductor Today · 1/14/2025 · View original source
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