NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, May 21

19:28Impact score 10
Toshiba and Global Power Technology accelerate SiC power device patent filings
Patent filing data shows robust activity in the SiC power device sector in Q1 2025, with over 840 new patent families filed globally. Toshiba and Global Power Technology were among the most active filers, indicating continued R&D investment and competitive positioning in this technology area. Neutral: This is a long-term R&D indicator with no immediate impact on component supply, pricing, or trader decisions.
SiC Power DevicesToshiba, Global Power TechnologySemiconductor TodayTechnical

Tue, May 20

22:46Impact score 20
Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package
Toshiba has begun volume shipments of four new 650V third-generation SiC MOSFETs in a compact DFN8x8 package. This launch expands the available options for power electronics designers seeking higher efficiency. Neutral: This is a standard product launch that adds to market supply but does not indicate a fundamental shift in supply, demand, or pricing for the broader component category.
650V SiC MOSFETToshiba Electronic Devices & Storage CorporationSemiconductor TodayProduct Launch

Fri, Nov 15

00:25Impact score 20
Toshiba ships early test samples of bare die 1200V SiC MOSFET
Toshiba has developed and is shipping early test samples of its new 1200V SiC MOSFETs in bare die format, targeting automotive traction inverters. This represents a new product introduction in the competitive SiC power semiconductor market. Neutral: This is a standard product launch with no immediate impact on supply, demand, or pricing for existing components.
SiC MOSFETToshiba Electronic Devices & Storage CorpSemiconductor TodayProduct Launch

Wed, Sep 25

19:07Impact score 20
Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes
Toshiba Electronic Devices & Storage Corporation has launched a series of ten new 1200V third-generation SiC Schottky barrier diodes for industrial applications, with shipments already started. This is an expansion of their existing SiC product portfolio targeting markets like PV inverters and EV charging stations. Neutral: This is a routine product line expansion with no immediate indication of capacity constraints or supply shifts that would impact spot market pricing for SiC components.
SiC Schottky Barrier DiodesToshiba Electronic Devices & Storage CorporationSemiconductor TodayProduct Launch

Thu, Feb 8

17:39Impact score 10
UK’s £11m REWIRE Innovation and Knowledge Centre to develop wide/ultrawide-bandgap high-voltage power electronics
A UK consortium led by the University of Bristol has secured £11 million in government funding to establish the REWIRE Innovation and Knowledge Centre, focusing on wide and ultra-wide bandgap power electronics. The initiative involves major industry partners including Bosch, Siemens, ST Microelectronics, and Cambridge GaN Devices. Neutral: This is a long-term R&D project with no immediate impact on component supply, pricing, or production capacity.
Wide-Bandgap SemiconductorsUltra-Wide-Bandgap SemiconductorsHigh-Voltage Power ElectronicsCambridge GaN Devices (CGD), ST Microelectronics and 3 totalSemiconductor TodayTechnical

Sat, Dec 9

00:19Impact score 65
Toshiba and ROHM collaborate on silicon and SiC power device and wafer manufacturing
ROHM and Toshiba Electronic Devices & Storage plan to collaborate on manufacturing and increased volume production of SiC and Si power devices, supported by METI. They will make intensive investments to enhance supply capabilities. Bearish: Capacity expansion plans typically alleviate shortages and may suppress spot prices.
SiC power devicesSilicon power devicesROHM Co Ltd, Toshiba Electronic Devices & Storage Corp (TDSC)Semiconductor TodayCapacity Change

Fri, Dec 8

23:24Impact score 15
Toshiba expands range of 3300V SiC MOSFET modules
Toshiba Electronic Devices & Storage Corporation has expanded its lineup with two new 3300V/800A SiC MOSFET modules, MG800FXF1ZMS3 and MG800FZF1JMS3, utilizing third-generation SiC chips for industrial equipment. This is a routine product portfolio expansion targeting high-voltage industrial applications. Neutral: This launch adds supply options in a niche high-power segment but does not indicate a material shift in overall market supply, demand, or pricing dynamics for SiC components.
SiC MOSFET ModuleToshiba Electronic Devices & Storage CorporationSemiconductor TodayProduct Launch

Thu, Aug 31

20:31Impact score 15
Toshiba releases third-generation SiC MOSFETs with reduced switching losses
Toshiba has begun shipping its third-generation TWxxxZxxxC series of ten SiC MOSFETs, which feature reduced switching losses. The new parts are targeted at industrial applications including server power supplies, EV chargers, and PV inverters. Neutral: This is a standard product refresh with no immediate impact on supply, demand, or pricing for the broader SiC component market.
SiC MOSFETToshibaSemiconductor TodayProduct Launch

Tue, Aug 29

23:54Impact score 15
Toshiba ships first 2200V dual SiC MOSFET module
Toshiba Electronic Devices & Storage Corp has begun volume shipments of what it claims is the industry's first 2200V dual silicon carbide (SiC) MOSFET module. The product targets industrial equipment applications, representing a technological milestone in high-voltage power semiconductors. Neutral: This is a standard product launch unlikely to immediately impact supply, demand, or pricing for mainstream SiC components in the near term.
SiC MOSFETToshiba Electronic Devices & Storage CorpSemiconductor TodayProduct Launch

Thu, Jul 13

20:36Impact score 20
Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V
Toshiba Electronic Devices & Storage Corporation has launched twelve 650V third-generation SiC Schottky barrier diodes, now shipping in volume for industrial applications. The new devices feature a forward voltage of 1.2V and target efficiency-critical uses like EV chargers and PV inverters. Neutral: This is a standard product launch expanding the SiC portfolio; it does not indicate a supply shock or immediate demand shift for existing components.
SiC Schottky Barrier DiodesToshiba Electronic Devices & Storage CorporationSemiconductor TodayProduct Launch

Fri, Dec 9

21:15Impact score 12
Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes
Toshiba Electronic Devices & Storage Corp announced an R&D milestone for a new SiC MOSFET design featuring check-pattern embedded Schottky barrier diodes, achieving an approximately 20% reduction in on-resistance. This development was presented at IEDM 2022 and represents a potential future improvement in device efficiency. Neutral: This is a long-term R&D announcement with no immediate impact on supply, demand, or pricing for trading.
SiC MOSFETToshiba Electronic Devices & Storage CorpSemiconductor TodayTechnical

Mon, Sep 5

17:37Impact score 20
Toshiba launches third-generation SiC MOSFETs
Toshiba Electronic Devices & Storage Corp has launched its third-generation TWxxNxxxC series of SiC MOSFETs, featuring improved on-resistance and switching loss characteristics. This is a routine product refresh in the competitive power semiconductor market. Neutral: This launch does not indicate a change in supply, demand, or pricing for existing components and is unlikely to impact near-term trading decisions.
SiC MOSFETToshiba Electronic Devices & Storage CorpSemiconductor TodayProduct Launch

Thu, Jan 27

21:46Impact score 15
Toshiba launches 1200V and 1700V SiC MOSFET modules
Toshiba Electronic Devices & Storage Corporation has launched two new SiC MOSFET dual modules: the 1200V/600A MG600Q2YMS3 and the 1700V/400A MG400V2YMS3, expanding its high-voltage power semiconductor portfolio. This launch is part of the broader industry trend towards SiC adoption in applications like EVs and industrial equipment for improved efficiency. Neutral: This is a standard product expansion that adds to market supply but does not indicate a near-term shift in supply, demand, or pricing for existing components.
SiC MOSFETToshiba Electronic Devices & Storage CorporationSemiconductor TodayProduct Launch

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NuAxi Stream - Real-Time Semiconductor Intelligence

Wed, May 21

Toshiba and Global Power Technology accelerate SiC power device patent filings

Tue, May 20

Toshiba releases 650V third-generation SiC MOSFETs in DFN8x8 package

Fri, Nov 15

Toshiba ships early test samples of bare die 1200V SiC MOSFET

Wed, Sep 25

Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes

Thu, Feb 8

UK’s £11m REWIRE Innovation and Knowledge Centre to develop wide/ultrawide-bandgap high-voltage power electronics

Sat, Dec 9

Toshiba and ROHM collaborate on silicon and SiC power device and wafer manufacturing

Fri, Dec 8

Toshiba expands range of 3300V SiC MOSFET modules

Thu, Aug 31

Toshiba releases third-generation SiC MOSFETs with reduced switching losses

Tue, Aug 29

Toshiba ships first 2200V dual SiC MOSFET module

Thu, Jul 13

Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V

Fri, Dec 9

Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes

Mon, Sep 5

Toshiba launches third-generation SiC MOSFETs

Thu, Jan 27

Toshiba launches 1200V and 1700V SiC MOSFET modules

Chip Teardown Lab2 opened

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