NuAxiSemiconductor trade intelligence
Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes
What happened
Toshiba Electronic Devices & Storage Corporation has launched a series of ten new 1200V third-generation SiC Schottky barrier diodes for industrial applications, with shipments already started. This is an expansion of their existing SiC product portfolio targeting markets like PV inverters and EV charging stations. Neutral: This is a routine product line expansion with no immediate indication of capacity constraints or supply shifts that would impact spot market pricing for SiC components.
Impact and signal
Low impactImpact score: 20/100
Affected components and suppliers
SiC Schottky Barrier Diodes
Toshiba Electronic Devices & Storage Corporation
product-launchSiCindustrial
Source and time
Source: Semiconductor Today · 9/25/2024 · View original source
Open the NuAxi live feed →
Real-time pricing, supply signals and AI analysis for semiconductor traders