NuAxiSemiconductor trade intelligence
Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes
What happened
Toshiba Electronic Devices & Storage Corp announced an R&D milestone for a new SiC MOSFET design featuring check-pattern embedded Schottky barrier diodes, achieving an approximately 20% reduction in on-resistance. This development was presented at IEDM 2022 and represents a potential future improvement in device efficiency. Neutral: This is a long-term R&D announcement with no immediate impact on supply, demand, or pricing for trading.
Impact and signal
Low impactImpact score: 12/100
Affected components and suppliers
SiC MOSFET
Toshiba Electronic Devices & Storage Corp
r&dproductivity-gain
Source and time
Source: Semiconductor Today · 12/9/2022 · View original source
Open the NuAxi live feed →
Real-time pricing, supply signals and AI analysis for semiconductor traders