According to a Blocks & Files report published Friday 30 Oct 2026, Samsung almost reported its first-ever ₩200 trillion quarterly revenues in its third 2026 quarter, with revenues of ₩195.3 trillion ($145.5 billion), up 121.8 percent Y/Y, and an operating profit of ₩107.4 trillion ($80 billion), making Samsung Electronics the world's first tech company to exceed ₩100 trillion ($74.5 billion) in quarterly operating profit. The report attributes this to soaring AI demand for HBM, DRAM and NAND enabling high prices for its semiconductor technology. The DS (Device Solutions) semiconductor business accounted for 72 percent of Samsung Electronics' revenues in the quarter, at ₩147 trillion ($109.6 billion), up 15 percent Q/Q; within that, memory at ₩140.7 trillion ($104.8 billion) accounted for 95.7 percent, achieved by ramping up HBM4 sales and meeting demand for server SSDs. Samsung said strong demand momentum for servers led to higher market prices across all applications. Competitor SK hynix reported revenues of ₩104 trillion ($78.9 billion) in its third 2026 quarter, with a ₩39.8 trillion (c$30 billion) profit, less revenue and profit than the directly comparable Samsung DS division. Samsung says investments are planned for new fabs and other infrastructure to meet strong AI and HPC demand, and it intends to further increase HBM, server DRAM, and SSD sales, specifically increasing supply of high-speed server DDR5 product and QLC SSDs. Samsung expects AI infrastructure capital expenditure to reach a historic level in 2027, greater than this year, and states that 'AI-driven demand will far exceed the industry supply in comparison with 2026.' These are reported results and company outlook, not achieved future outcomes.
SK hynix CEO Kwak Noh-jung joined the company's earnings conference call for the first time since taking office, on Oct. 28 at SK hynix's third-quarter 2026 earnings call, to outline its shareholder return policy; his appearance was seen as an effort to restore market confidence following shareholder opposition to the proposed IPO of Solidigm and a sharp decline in SK hynix's share price. Kwak said that after comprehensively considering financial market volatility and the correction in semiconductor industry share prices, the company decided to suspend its review of a Solidigm IPO; SK hynix had disclosed on Oct. 23 that it suspended consideration of both a pre-IPO investment round and an IPO for Solidigm, amid concerns that a separate listing could undermine shareholder value at the parent company through a duplicate listing. Kwak also announced plans to distribute returns from the Kioxia investment through a special dividend: SK hynix decided to distribute approximately 7 trillion won of its Kioxia investment gains as an initial special dividend in the third quarter, equivalent to 10,000 won per share, with the remainder to be included in the year-end dividend after final investment returns for this year are determined; the total amount to be returned through special dividends has yet to be finalized. Industry observers estimate the profit from the fund investment at approximately 20 trillion won (SK hynix joined a Bain Capital-led consortium in 2018 and invested a total of 395 billion yen, approximately 3.9 trillion won at the time, in Kioxia, then known as Toshiba Memory, through fund contributions and purchases of convertible bonds, fully recovering its investment in June when Bain Capital sold its stake in Kioxia). Including an additional dividend of 10,000 won per share reflecting improved operating performance, the company set its third-quarter dividend at 20,000 won per share, totaling approximately 14 trillion won. Including the third-quarter dividend, SK hynix plans to return approximately 100 trillion won to shareholders for the current fiscal year, comprising more than 30 trillion won in cash dividends and more than 60 trillion won in share repurchases and cancellations; first- and second-quarter dividends totaled approximately 265.8 billion won and 273.3 billion won respectively, about 539.1 billion won combined, and after deducting first-half dividends and the approximately 14 trillion won third-quarter dividend from the annual cash dividend target, additional fourth-quarter dividends are estimated to exceed 15 trillion won. The planned repurchases of more than 60 trillion won include the 40 trillion won program announced in August, which was completed last week with shares expected to be canceled soon; at its meeting on Oct. 28, the board approved an additional 20 trillion won in share repurchases, of which 10 trillion won will be used for shareholder returns with all purchased shares to be canceled, while the remaining approximately 10 trillion won will be used for employee compensation (excluded from the annual shareholder return total); based on the annual target, the company is expected to announce at least another 10 trillion won in share repurchases and cancellations during the fourth quarter. Additionally, at the end of the third quarter SK hynix held 114.5 trillion won in cash and cash equivalents with 15.8 trillion won in borrowings; net cash stood at 98.7 trillion won, up 29.3 trillion won from the previous quarter, moving closer to the 100 trillion won net cash financial stability target presented at its annual shareholders' meeting in March.
Power Electronics News published a roundup of this week's articles covering practical EMI guidance for power converters, FinFET-based power devices, and simulation-driven thermal modeling for SiC and GaN converters. The roundup also lists news items: Navitas launched a 2300-V SiC power module for grid infrastructure, with the 2300 V SiC technology targeting higher efficiency and power density in AI data centers, energy storage, and grid applications; Allegro introduced 48V power management and precision position sensors for robotics, helping humanoid robots with integration, motion control, and functional safety; EPC GaN FETs enable a 4 kW high-efficiency converter, where the dual-phase EVAL-LT7930-AZ combines ADI's LT7930 controller with EPC2361 transistors for high-current power conversion; STMicroelectronics launched a QML-V qualified LVDS receiver, the RHFLVDS42, supporting data rates up to 600Mbps, 300krad(Si) radiation resistance, and 8kV ESD immunity for aerospace systems; onsemi and Sungrow target 99.3% efficiency in utility-scale BESS, where the PowerTitan 3.0 platform supports conversion units up to 450 kW and could save over 475 MWh annually in a 100 MW installation. The articles section also covers a GaN-based dual-side cooled package for 650-V GaN in 800-V AI data centers. This item is an informational roundup with no price or supply-demand data.
SiCGaNFinFETNavitas, Allegro and 9 totalPower Electronics News
Toshiba Electronics Europe GmbH has introduced the TCKE5 Series of electronic fuse ICs (eFuses), designed to protect low-voltage power lines in space-constrained electronic equipment. The series includes four models (TCKE501UA, TCKE501UL, TCKE502UA, TCKE502UL), operates from 1.7V to 5.5V, and supports 1.8V, 3.3V, and 5V supply rails in applications such as SD memory cards, USB and HDMI devices, laptop PCs, and gaming consoles. The devices combine overcurrent detection and short-circuit protection in a compact SOT-353F (UFV) package; an external resistor sets the overcurrent detection threshold, and the typical overcurrent mask time is 2.4ms. The UA variants automatically retry operation after a fault, while the UL variants latch off and require an external signal to restart. All four devices support a maximum DC output current of 1.0A, and each IC measures 2.0mm × 2.1mm × 0.7mm (typ.). For input voltages from 5V to 5.5V, Toshiba advises following the datasheet recommendations for output capacitance or using an external Schottky barrier diode to manage voltage transients during short-circuit protection. Shipments of the TCKE5 Series have started.
eFuse ICs (electronic fuse ICs)Toshiba Electronics Europe GmbHPower Electronics News
On its October 22 earnings call, Western Digital explained how it intends to meet a sharp rise in hard-drive demand: it will not build more drives, but will keep raising price per terabyte, pack more data into each drive, and spend its capital on recording heads and disk media rather than assembly capacity. That leaves its growth dependent on how quickly it moves to heat-assisted magnetic recording (HAMR), a technology in which Seagate is already shipping at scale. Per the title, Toshiba plans to double output. The stated cause is a sharp rise in hard-drive demand.
hard drivesWestern Digital, Toshiba and 3 totalDigiTimes AsiaCapacity Change
Toshiba launched a 3300V SiC MOSFET module rated at 800A for demanding power conversion. Vishay introduced 650V superjunction MOSFET modules with a wide operating temperature range. Skyworks qualified the Si829x automotive isolated gate driver for SiC and IGBT applications.
SiC MOSFETPower ModuleSuperjunction MOSFETToshiba, Vishay and 3 totalPower Electronics NewsProduct Launch
Toshiba has introduced a 75-V eFuse that offers an adjustable current limit of up to 6 A along with user-settable capabilities. This is product-introduction background information; the source does not state any price, supply or demand impact.
Toshiba Electronics Europe launched the IX800FXF2YMS4, a 3300V/800A SiC MOSFET module featuring third-generation technology and silver sintering. This product targets high-power applications including railway traction and UPS. The launch indicates Toshiba's product expansion but does not currently affect supply or pricing.
SiC MOSFET ModuleSilicon Carbide MOSFETToshiba Electronics EuropePower Electronics NewsProduct Launch
Seagate and Toshiba are reportedly competing to acquire TDK's HDD magnetic head business, a multi-billion dollar deal that would consolidate the industry's only independent supplier. This acquisition threatens to disrupt Toshiba's sole supply source and alter the competitive balance of the HDD market. Traders should watch for the outcome as it impacts pricing power and supply security.
HDD Magnetic HeadsSeagate Technology, Toshiba and 3 totalTom's HardwarePartnership/M&A
Toshiba plans to double AI data center HDD capacity by fiscal 2027, investing approximately 60 billion JPY in its Philippine plant. The move aims to raise its market share from just over 10% to 30%. Bearish for the market, signaling future supply increases.
HDDToshibaTrendForce Official (Market Data)Capacity Change
Toshiba plans a 60 billion JPY investment to double AI data center HDD capacity by FY2027. Driven by AI infrastructure demand and SSD shortages, the HDD market remains tight. Bearish: Capacity expansion signals future supply relief, pressuring current tight prices.
Hard Disk Drives (HDD)Nearline HDDsToshiba, Western Digital and 3 totalTrendForceCapacity Change
Toshiba has launched the IX800FXF2YMS4, a third-generation 3300V SiC MOSFET module for industrial applications. The module targets railway vehicles and renewable energy systems. Watch: This release highlights Toshiba's continued technological advancement in the high-voltage SiC sector.
SiC MOSFETToshiba Electronic Devices & Storage CorpSemiconductor TodayProduct Launch
SK hynix denies rumors of a $3.6B pre-IPO fundraising for Solidigm, though reports suggest a $7.2B target and $36B valuation. Capacity expansion at the Dalian fab continues.
NoMIS Power demonstrated a 6.5 kV SiC MOSFET with >8 kV blocking voltage and 90 mΩ Rds(on), currently in sampling. Mass production is scheduled for Q4 2026, extending their roadmap to 10 kV+ devices.
SiC MOSFETSiC JBSFETSiC IGBTNoMIS PowerPower Electronics NewsProduct Launch
SK hynix has become Kioxia's largest shareholder via a special purpose company, holding 14.19% of shares. This move, stemming from a 2018 investment, aims to solidify SK hynix's position in the NAND market. Watch: Despite the stake increase, voting rights are capped at 15% and regulatory hurdles may prevent direct management control.
NAND FlashSK hynix, Kioxia and 3 totalTrendForcePartnership/M&A
Toshiba reduced its stake in Kioxia Holdings from 16.1% to 15.1% as of July 15. This reflects valuation fluctuations for the memory maker. Watch: No immediate impact on component supply or pricing.
Intel and Fortinet announced the fabrication of Fortinet's sixth-generation Security Processor (SP6) on the Intel 4 node, marking the first named external foundry customer for the process. This agreement signals progress for Intel Foundry Services (IFS) in securing external capacity despite delays compared to the planned Intel 3 node. Bullish for Intel Foundry capacity utilization.
Infineon Technologies introduced two new CoolGaN BDS 40 V G3 bidirectional switches, IGK048B041S and IGK120B041S, targeting compact consumer electronics. These devices reduce PCB footprint by up to 82% and offer lower gate charge compared to silicon alternatives. The launch supports Infineon's strategy of advancing 300mm GaN manufacturing capacity.
GaN DevicesGallium NitridePower SwitchesInfineon TechnologiesPower Electronics NewsProduct Launch
The U.S. Chips Act allocated over $1.5 billion in R&D funding to quantum computing companies, including IBM and Globalfoundries. IBM and the Department of Commerce plan to establish a 300mm quantum wafer foundry, Anderon, in New York.
Quantum ChipSuperconducting QubitPhotonic QubitIBM, Globalfoundries and 8 totalElectronics WeeklyPartnership/M&A
Related manufacturers
IBM, Globalfoundries, Atom Computing, Rigetti, D-Wave, PsiQuantum, Diraq, U.S. Department of Commerce