NuAxiSemiconductor trade intelligence

Toshiba Launches 3300V High-Power SiC MOSFET Module

What happened

Toshiba Electronics Europe launched the IX800FXF2YMS4, a 3300V/800A SiC MOSFET module featuring third-generation technology and silver sintering. This product targets high-power applications including railway traction and UPS. The launch indicates Toshiba's product expansion but does not currently affect supply or pricing.

Impact and signal

Low impactImpact score: 25/100

Affected components and suppliers

SiC MOSFET ModuleSilicon Carbide MOSFET

Toshiba Electronics Europe

IX800FXF2YMS4

SiCPower ModuleHigh Voltage

Source and time

Source: Power Electronics News · 10/7/2026 · View original source

Open the NuAxi live feed →

Real-time pricing, supply signals and AI analysis for semiconductor traders

Wolfspeed chooses Germany for site of largest silicon carbide device fabSemiconductor Today · 2/2/2023
ST supplying silicon carbide MOSFETs to Li AutoSemiconductor Today · 12/22/2023
Navitas Launches 2300-V SiC Power Module for Grid InfrastructurePower Electronics News · 10/22/2026
xEV PMIC market to double to $14.5bn by 2031Electronics Weekly · 8/13/2026
Wolfspeed files for Chapter 11 bankruptcy as part of financial restructuringSemiconductor Today · 7/1/2025
Bosch gains $225m US CHIPS funding for $2bn transformation of Roseville fab for SiC productionSemiconductor Today · 7/16/2026

Toshiba Launches 3300V High-Power SiC MOSFET Module

What happened

Impact and signal

Affected components and suppliers

Source and time

Related briefings