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SYNDEM and VSM Architectures Improve Future’s Grid Stability, Engineered Diamonds Solve Extreme Power Densities in Data Centers, Hybrid Thyristor/SiC JFET Solid-State Contactors: Power Electronics Week Insights

What happened

Toshiba launched a 3300V SiC MOSFET module rated at 800A for demanding power conversion. Vishay introduced 650V superjunction MOSFET modules with a wide operating temperature range. Skyworks qualified the Si829x automotive isolated gate driver for SiC and IGBT applications.

Impact and signal

Low impactImpact score: 25/100

Affected components and suppliers

SiC MOSFETPower ModuleSuperjunction MOSFETGate Driver
ToshibaVishaySkyworks
SiCPower ModuleAutomotiveHigh Voltage

Source and time

Source: Power Electronics News · 10/9/2026 · View original source

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