EMI Guidance for Power Converters, FinFET-Based Power Devices, Simulation-Driven Thermal Modeling for SiC and GaN Converters: Power Electronics Week Insights
Power Electronics News published a roundup of this week's articles covering practical EMI guidance for power converters, FinFET-based power devices, and simulation-driven thermal modeling for SiC and GaN converters. The roundup also lists news items: Navitas launched a 2300-V SiC power module for grid infrastructure, with the 2300 V SiC technology targeting higher efficiency and power density in AI data centers, energy storage, and grid applications; Allegro introduced 48V power management and precision position sensors for robotics, helping humanoid robots with integration, motion control, and functional safety; EPC GaN FETs enable a 4 kW high-efficiency converter, where the dual-phase EVAL-LT7930-AZ combines ADI's LT7930 controller with EPC2361 transistors for high-current power conversion; STMicroelectronics launched a QML-V qualified LVDS receiver, the RHFLVDS42, supporting data rates up to 600Mbps, 300krad(Si) radiation resistance, and 8kV ESD immunity for aerospace systems; onsemi and Sungrow target 99.3% efficiency in utility-scale BESS, where the PowerTitan 3.0 platform supports conversion units up to 450 kW and could save over 475 MWh annually in a 100 MW installation. The articles section also covers a GaN-based dual-side cooled package for 650-V GaN in 800-V AI data centers. This item is an informational roundup with no price or supply-demand data.
- Related manufacturers
- Navitas, Allegro, EPC, ADI, STMicroelectronics, onsemi, Sungrow, Toshiba, Flex
- Part numbers
- EVAL-LT7930-AZEPC2361LT7930RHFLVDS42PowerTitan 3.0
- Impact score
- 30 / 100, medium impact