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Toshiba Starts Sampling 1200V SiC MOSFET in QDPAK Package

What happened

Toshiba has begun shipping test samples of the TW007D120E 1200V SiC MOSFET, featuring a 58% reduction in on-resistance compared to existing products. The device targets AI data centers and renewable energy applications with improved thermal performance. Watch: Mass production is planned for fiscal year 2026.

Impact and signal

Low impactImpact score: 10/100

Affected components and suppliers

SiC MOSFET

new-productsamplingai-datacentersiC

Source and time

Source: Power Electronics News · 5/25/2026 · View original source

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