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Toshiba’s DTMOSVI 600V super junction power MOSFETs address datacentres
What happened
Toshiba launched DTMOSVI 600V HSD N-channel MOSFETs with 36% lower RDS(ON)*Qg. Targeting datacentre and UPS applications.
Impact and signal
Low impactImpact score: 25/100
Affected components and suppliers
Power MOSFETsDTMOSVI 600V
new_productpower_mosfetefficiency
Source and time
Source: Electronics Weekly · 3/27/2026 · View original source
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