[News] MIT Announced Breakthrough in GaN-on-Single-Crystal Diamond Thermal Management Technology
MIT researchers embedded GaN transistors into single-crystal diamond layers to solve thermal bottlenecks. Published at IEEE IMS 2026, this heterogenous integration eliminates parasitic capacitance for 6G and satellite applications. Neutral. This is a long-term R&D milestone with no immediate supply chain or price impact.
- Related manufacturers
- Massachusetts Institute of Technology (MIT)
- Impact score
- 15 / 100, low impact