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[News] MIT Announced Breakthrough in GaN-on-Single-Crystal Diamond Thermal Management Technology
What happened
MIT researchers embedded GaN transistors into single-crystal diamond layers to solve thermal bottlenecks. Published at IEEE IMS 2026, this heterogenous integration eliminates parasitic capacitance for 6G and satellite applications. Neutral. This is a long-term R&D milestone with no immediate supply chain or price impact.
Impact and signal
Low impactImpact score: 15/100
Affected components and suppliers
Gallium Nitride (GaN)Diamond
Massachusetts Institute of Technology (MIT)
technicalgallium-nitridediamondthermal-management
Source and time
Source: TrendForce · 6/21/2026 · View original source
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