Fraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes
Fraunhofer IAF presented a 1200V bidirectional GaN power switch with integrated free-wheeling diodes at PCIM 2025. The development is part of the 'GaN4EmoBiL' project funded by the German government, focusing on applications in electromobility and bidirectional charging. Neutral: This is a research milestone with no immediate impact on commercial supply, pricing, or trader decisions.
- Related manufacturers
- Fraunhofer IAF
- Impact score
- 10 / 100, low impact