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CISM at Swansea establishes UK’s first capability for 4-inch gallium oxide thin-film growth
What happened
Swansea University's CISM has established the UK's first capability for growing high-quality, uniform gallium oxide thin films on 4-inch wafers using a new AIXTRON CCS deposition system. This is a research and development milestone for Ga2O3, a promising wide-bandgap semiconductor material for power electronics. Neutral: This academic R&D advancement has no immediate impact on commercial supply, demand, or pricing for electronic components.
Impact and signal
Low impactImpact score: 8/100
Affected components and suppliers
AIXTRON
R&Dsemiconductor-materialswide-bandgap
Source and time
Source: Semiconductor Today · 3/31/2025 · View original source
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