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Fraunhofer IAF presents bidirectional 1200V GaN switch with integrated free-wheeling diodes
What happened
Fraunhofer IAF presented a 1200V bidirectional GaN power switch with integrated free-wheeling diodes at PCIM 2025. The development is part of the 'GaN4EmoBiL' project funded by the German government, focusing on applications in electromobility and bidirectional charging. Neutral: This is a research milestone with no immediate impact on commercial supply, pricing, or trader decisions.
Impact and signal
Low impactImpact score: 10/100
Affected components and suppliers
GaN Power SemiconductorsPower Switches
Fraunhofer IAF
R&DGaNpower-electronics
Source and time
Source: Semiconductor Today · 4/30/2025 · View original source
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