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Infineon investing €2bn in third module at Malaysia front-end fab for wide-bandgap power semiconductors

What happened

Infineon is investing over €2 billion to build a third module at its Kulim, Malaysia fab, significantly expanding its manufacturing capacity for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. This investment aims to capture growth in automotive, renewable energy, and data center markets. Bearish: This major capacity expansion for SiC/GaN increases future supply, potentially easing long-term pricing pressure and component availability constraints.

Impact and signal

Medium impactImpact score: 60/100

Affected components and suppliers

SiC Power SemiconductorsGaN Power Semiconductors
Infineon Technologies AG
capacity-expansioncapexwide-bandgap

Source and time

Source: Semiconductor Today · 2/17/2022 · View original source

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