PNT said on Oct. 23 that it will participate in C-TOUCH & DISPLAY SHENZHEN 2026 and FILM & TAPE EXPO 2026, scheduled for Oct. 27–29 in Shenzhen, China, to showcase its high-speed, high-precision roll-to-roll equipment and web handling technology targeting China's display and functional film markets. PNT plans to identify local customers, expand opportunities for equipment orders, assess equipment demand among local companies, and pursue discussions on new equipment supply contracts. The article notes that Chinese manufacturers are expanding production capacity for related materials, particularly those used in high-value-added products such as foldable and automotive displays. This is a participation plan and prospective contract discussions; no confirmed supply contract has been reported.
roll-to-roll equipmentoptical films for displaysindustrial functional materialsPNTThe Elec
Schneider Electric said on Oct. 23 that it is launching next-generation prefabricated power modules and power skids, with the 2.5MW model being the company's highest-capacity single-container prefabricated power solution to date. The new products are based on a reference design jointly developed for Nvidia's GB300 NVL72 AI server system; the design supports power densities of up to 142 kilowatts (kW) per rack and integrates power management and liquid cooling controls. The power modules incorporate Schneider Electric's Galaxy VXL uninterruptible power supply (UPS) technology and are available in three capacities: 2MW, 2.25MW and 2.5MW. Schneider Electric will manufacture the new products at its production facility near Barcelona, Spain, and plans to launch them first in Europe, followed by North America later in 2026, before expanding sales to the Asia-Pacific region.
prefabricated power modulepower skid2.5MW prefabricated power moduleSchneider ElectricThe Elec
Nvidia unveiled a prototype of its next-generation co-packaged optics (CPO) technology, Optics-on-Interposer (OOI), at SEMICON West 2026. The design moves the optical engine from a conventional organic package substrate to the silicon interposer carrying the compute chips, increasing bandwidth density and reducing power consumption for future AI system interconnects. No production or commercialization timeline is given in the source; this is a prototype targeting post-2028 AI needs.
co-packaged optics (CPO) technologyOptics-on-Interposer (OOI)optical engineNvidiaDigiTimes Asia
Magnate Technology expects rising aircraft engine demand and semiconductor equipment opportunities to support its growth while it expands production capacity. The aerospace components maker forecasts revenue of nearly NT$2 billion (US$61.5 million) in 2026 and expects 15% to 20% revenue growth in 2027. These figures are company forecasts/expectations, not achieved results.
According to a report by a Seoul newspaper (retweeted by TrendForce on October 24, 2026), Samsung is to use TSMC technology for Nvidia's next-generation memory chips. This is only a media report; the source does not state the cause and provides no specific terms, timeline, or confirmed implementation status, and it is not stated whether the report has been confirmed by Samsung, TSMC, or Nvidia.
Nvidia next-generation memory chipsSamsung, TSMC and 3 totalTrendForce Official (Market Data)Partnership/M&A
Intel CTO Pushkar Ranade said on the Dwarkesh Podcast that, if the measure is technology alone, Intel has already caught up with TSMC, while scale will take longer. He stated that global tools allow roughly 2x more leading-edge output, not 10x. This is a podcast statement by an executive; the source does not state the cause, and no specific price, capacity adjustment plan or other action is mentioned.
technologyleading-edge outputIntel, TSMCTrendForce Official (Market Data)
Vertical Semiconductor signed a letter of intent with the US Department of Commerce's CHIPS Research and Development Office (CRDO) to receive up to $73m in federal incentives under the CHIPS and Science Act.
Delta is showcasing microgrid solutions for AI factories, high-performance computing (HPC) data centers, and smart manufacturing at Energy Taiwan 2026, held October 14 to 16 at Taipei Nangang Exhibition Center, Hall 1, 4F, Booth M0319a. Its prefabricated DC power system based on solid-state transformers (SSTs) uses a containerized architecture integrating SSTs, DC/DC converters, and control equipment, reduces the number of power conversion stages, and achieves SST energy efficiency of up to 98.5%; according to Delta, its implementation can improve grid-to-chip energy efficiency in AI data centers by 4–5%. The system can incorporate high-C-rate batteries to respond to rapid AI workload variations, providing millisecond-level power support, and its modular, prefabricated design can potentially shorten deployment time by up to 50%, with an architecture supporting future capacity expansion as computing demand increases. Delta is also presenting solid oxide fuel cell (SOFC) technology for distributed power generation, with overall system efficiency of up to 85% when heat recovery is included; Delta plans to begin trial production of its SOFC solution by the end of 2026. The exhibition also includes EnergiQ, a digital energy management platform developed by Delta's ESG Consulting Office and built around the ISO 50001 methodology, plus expert presentations involving Taiwan's Industrial Technology Research Institute, Taiwan Institute of Economic Research, and Delta's smart energy and microgrid teams.
At an event this week, Micron announced that its next-generation 3D NAND (G11), which it plans to enter mass production in 2H 2027, is set to offer three significant advantages: doubling storage density (approximately twice the bit density of G9, with 3D TLC going from 21 Gb/mm² to 42 Gb/mm²), increasing I/O performance by up to 50% versus the company's current-generation NAND memory (interface speed from 3,600 MT/s to 5,400 MT/s), and reducing data transfer energy consumption per bit by more than 25%. G11 will adopt wafer-on-wafer bonding, manufacturing the NAND array on a new 3D NAND node and the peripheral circuits and I/O on a logic process before bonding them together, and will transition to more than 400 NAND layers; Micron has not disclosed the exact number of active wordline layers or memory decks. Micron executive Scott DeBoer described G11 as the world's most advanced NAND, ramping in the second half of next year. Micron also expects to disclose more G11 technical details in 2027 and, beyond G11, is developing high-mobility materials and denser cell architectures to continue XYZ scaling; specific architectural details, density targets, or production schedules for post-G11 generations have not been disclosed. These are the company's stated plans and expectations; mass production has not yet occurred.
3D NANDG11 3D NANDMicronTom's HardwareCapacity Change
XP Power has introduced the UCH750 series of 750W convection-cooled AC-DC power supplies for medical and industrial equipment requiring quiet operation, high efficiency, and reliable performance. The compact, chassis-mount, fanless design reduces acoustic noise and removes a wear-prone mechanical component, making the supplies suitable for noise-sensitive applications including medical imaging, patient monitoring, diagnostic instruments, treatment equipment, and home healthcare devices, as well as hospital equipment, factory automation, semiconductor manufacturing, test-and-measurement systems, and telecommunications infrastructure. The series achieves up to 96% conversion efficiency, and each unit measures 203.2 × 127.0 × 40.0 mm. It supports medical equipment requiring BF (Body Floating) applied-part classification, provides two Means of Patient Protection (2 × MOPP) of isolation between input and output, with a maximum patient leakage current of 100 µA under 264 VAC, 60 Hz conditions. The series reports to IEC 60601-1 and has UL and TÜV safety approvals, with Class I and Class II versions available; IEC 62368-1 safety approvals support IT and industrial integration, and the UCH750 meets EN 55032 Class B limits for conducted and radiated emissions. Five models provide nominal DC outputs of 12 V, 24 V, 36 V, 48 V, and 54 V from a universal 90–264 VAC input, delivering the full 750 W output from a 100 VAC input at ambient temperatures up to +50°C. Additional features include remote on/off control, a 5 VDC/2 A standby output, and built-in protection against overload, short circuit, overvoltage, and overtemperature. The series is available through Avnet Abacus, DigiKey, element14, Farnell, Mouser, RS, TME, authorized regional distributors, and directly from XP Power, with a three-year warranty. This is a product introduction announcement and does not constitute confirmed capacity or price changes.
UCH750 series 750W convection-cooled AC-DC power suppliesXP PowerPower Electronics News
On October 23, 2026, Microchip Technology (Nasdaq: MCHP) announced the launch of the POL-05-20S-T, a radiation-tolerant Point-of-Load (POL) converter designed for the demanding power requirements of space processing applications. The device uses Gallium Nitride (GaN) power devices to deliver up to 20A of output current, in a compact 25g surface-mount package measuring 1.51” x 1.51” x 0.45”. It has a wide input range of 4.75V to 13.2V and an adjustable 0.7V to 5V output, and is designed for high-current, fast-transient applications such as core voltage rails of FPGAs, microcontrollers, ASICs and other processing-intensive digital loads. Electrical parameters are specified before and after irradiation up to a Total Ionizing Dose (TID) of 50 krad, it is characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 43 MeV·cm²/mg, and it operates from −55°C to +100°C at full load. The POL-05-20S-T is now available in production quantities and can be purchased directly from Microchip or via sales representatives or authorized worldwide distributors. The source does not state the cause (this is a product launch, so no cause is applicable).
radiation-tolerant GaN Point-of-Load (POL) converterMicrochip TechnologyElectronics Sourcing
In an interview at SEMICON West 2026, Soitec Chief Product Officer René Jonker discussed the company, which was spun out of CEA-Leti in 1992 around the Smart Cut process. Soitec now runs five main technology platforms: RF-SOI (used in RF switches and low-noise amplifiers in practically every 5G phone and Wi-Fi module), FD-SOI (used in automotive radar, IoT microcontrollers and edge devices, often cutting power by 30 to 50 percent without a node shrink), Power-SOI (high-voltage automotive and industrial circuits), POI (acoustic RF filters for 5G and 6G), and Photonics-SOI, developed a decade ago and now the platform carrying the company. Jonker said Photonics-SOI is 'now seen as the new gold'; as AI cluster connectivity pushes traffic from copper to fiber, it is driving Soitec's business 'with a very impressive growth rate' and underpins the co-packaged optics now coming into AI data centers. The article notes that Soitec trades on Euronext Paris and that an investor who put $100 into its stock in January 2026 was holding more than $600 by early October. On competition, Jonker said direct competition comes mostly from GlobalWafers, which 'has or used to have access to our IP,' while technology-level competition includes FD-SOI customers who could choose FinFET at TSMC, and a trade-off between silicon and indium phosphide for optical waveguides. SmartSiC (lowering the cost of SiC power devices for EV inverters) and RF-GaN on insulator (in development for 6G power amplifiers and aerospace) remain in development, and FD-SOI is moving to smaller geometries.
Navitas Semiconductor (Nasdaq: NVTS) announced an ultra-high-voltage (UHV) SiC power module family for advanced energy and grid infrastructure. The new G4H08MT23GB4 2300 V full-bridge module family uses the industry-standard SiCPAK form factor and has a class-leading RDS(ON) (8 mΩ). It was developed to enhance efficiency and power density in solid-state transformers, grid-scale battery energy storage systems, solar inverters, and EV megawatt charging infrastructure, enabled by Navitas' fourth-generation GeneSiC Trench-Assisted Planar (TAP) architecture; the launch extends Navitas' 2300 V and 3300 V ultra-high voltage SiC portfolio. The modules use an aluminum nitride (AlN) active-metal-braze (AMB) substrate supporting isolation capability of over 5 kV, epoxy-resin potting technology delivering 10x improvements in thermal conductivity versus silicone gel, high-current press-fit pins with twice the current-carrying capability per pin versus standard press-fit connections, and an optional pre-applied thermal interface material (TIM). The new module family will be qualified to Navitas' AEC-Plus reliability benchmark, which tests beyond AEC-Q101 and JEDEC standard requirements and includes dynamic reverse bias (DRB) and dynamic gate switching (DGS) testing, more than triples the duration of static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R), implements extended power-cycling and temperature-cycling testing, and delivers HV-H3TRB (HV-THB) qualification for power modules, discrete and known-good-die (KGD) devices. The announcement places the module family at the center of Navitas' AI infrastructure portfolio as the medium-voltage building block for solid-state transformers that convert grid power directly into the high-voltage DC rails used inside AI data center racks.
ultra-high-voltage (UHV) SiC power module familyfourth-generation GeneSiC Trench-Assisted Planar (TAP) architectureNavitas SemiconductorEE Journal
MicroVision, Inc. (NASDAQ: MVIS) announced the commercial production launch of MOVIA™ Pro and is shipping sensors to meet customer demand. MOVIA Pro is the company's next-generation short-range lidar sensor and the production-ready version of MOVIA S, featuring onboard perception, multi-echo sensing, and an integrated processing architecture that lets perception software run directly on the sensor via MicroVision's Open Software Framework. The company's Orlando-based production facility is manufacturing MOVIA Pro to meet increasing demand; CEO Glen DeVos said customers are progressing from evaluating prototypes to launching commercial programs. The sensor targets applications including intelligent infrastructure, unmanned aerial systems, warehouse and industrial automation (AMRs, AGVs, forklift ADAS), security and defense, and selected automotive uses. No price or volume figures were provided in the announcement.
MOVIA Pro short-range lidar sensorMicroVision, Inc. (NASDAQ: MVIS)EE JournalCapacity Change
An analysis article published 23 October 2026 reports that export controls keep ASML's most advanced EUV lithography machines out of China, so the country's chip industry relies on DUV lithography with multiple patterning to make advanced chips, at the cost of bigger dies, more defects, lower yields, longer manufacturing times and higher bills. Chris Mack, co-founder and CTO of Fractilia, said industry conventional wisdom held that three exposures on a 193 immersion tool cost about the same as one exposure on an EUV tool, and that at four masks EUV became more cost-effective. Teardowns of Huawei's Mate 60 Pro in 2023 found its Kirin 9000S processor made by SMIC using a second-generation 7nm-class process without EUV; analysis of Huawei's Kirin 9030 found SMIC had pushed its DUV-based process closer to 5nm-class density, though it continued to lag TSMC and Samsung leading processes. A June Morgan Stanley report estimated Chinese DRAM maker CXMT was producing only around one-third as many bits per wafer as Western competitors, with the older process node accounting for only about a third of that shortfall, and said access to lithography is a 'hard ceiling' on Chinese memory development. Micron's 1-alpha generation was developed without EUV, showing how far DUV can be stretched; Micron's newer 1-gamma DRAM process uses EUV, which Micron said achieves more than 30% greater bit density per wafer than its preceding 1-beta generation. Morgan Stanley assumes CXMT remains stuck on its 1-alpha process without EUV, yet raises its share of global DRAM bit supply from 14% in 2026 to 16% in 2028 by building more greenfield capacity, and expects China's AI chip self-sufficiency to rise from 42% in 2025 to 70% by 2030. Mack said he would be hard pressed to believe a three-nanometer or two-nanometer node is economically viable without EUV.
DUV lithographyEUV lithographyDRAMASML, SMIC and 7 totalTom's Hardware
Atomera Inc, a semiconductor transistor materials and technology licensing company based in Los Gatos, CA, USA, has entered into a joint development agreement (JDA) with IQE plc, an epiwafer and substrate maker based in Cardiff, Wales, UK, to bring high-performance, cost-effective RF gallium nitride (GaN-on-Si) to volume markets. This is a joint development arrangement, planned in nature and still at the development stage, with volume production yet to be realized.
RF GaN (gallium nitride)Atomera Inc, IQE plcSemiconductor TodayPartnership/M&A
This is a technical overview (background) article discussing the roles of the FinFET structure and vertical GaN in high-power electronics (industrial, EVs, AI data centers); it contains no price or supply-demand movement. Key points: FinFETs are moving from logic to the power path, with foundries such as GlobalFoundries offering FinFET processes; Empower Semiconductor (now part of Analog Devices) developed its FinFast platform around ultra-fast FinFET-based power transistors; Claros (now part of Navitas) announced it will manufacture its integrated voltage regulators (IVRs) on Samsung Foundry's US-based 14-nm FinFET process. According to Empower, its Crescendo IVRs achieve roughly 20x faster transient response than conventional solutions; by paralleling up to 50 IVRs of roughly 60 A each, more than 3,000 A can be supplied to the load, with 2x lower voltage droop, which the company says yields an additional 15% reduction in xPU power for a typical AI workload. In May 2026, Analog Devices said it had entered a definitive agreement to buy Empower Semiconductor for $1.5 billion in cash, and the acquisition closed in July 2026. On vertical GaN: in 2024 Power Integrations acquired Odyssey Semiconductor's assets to develop vertical-conduction GaN FETs with 650 V and 1,200 V blocking voltages; onsemi introduced its proprietary GaN-on-GaN vertical architecture (vGaN), saying it reduces energy loss by almost 50%, manufactured at its fab in Syracuse, NY, acquired from NexGen Power Systems at the end of 2024; in October 2025, MIT spin-out Vertical Semiconductor raised an $11 million seed round led by Playground Global, demonstrated its vertical GaN process for 100 V to 1.2 kV device classes on 8-inch wafers, and hopes to have a fully integrated product out by the end of the year. The source does not state any cause related to price impact or market supply-demand.
FinFET-based power transistors (IVRs)vertical GaN power transistorsintegrated voltage regulators (IVRs)Analog Devices, Empower Semiconductor and 10 totalPower Electronics News
Related manufacturers
Analog Devices, Empower Semiconductor, Navitas, Samsung Foundry, GlobalFoundries, onsemi, Power Integrations, Odyssey Semiconductor Technologies, Vertical Semiconductor, NexGen Power Systems
On Friday 23 October 2026, SK hynix said it will halt its review of potential pre-IPO and IPO options for Solidigm, meaning there will be no Solidigm IPO on the US stock market. SK hynix had explored various funding options, including a potential IPO, to finance a new fab in the US to meet growing AI memory demand, with a Solidigm US fab estimated to cost $15 to $30 billion. The company said that while an IPO was expected to ease investment burdens and expand capacity for shareholder returns, the review was discontinued in light of market conditions and share price trends; it also said financial market volatility has increased, contributing to a broader correction in semiconductor stocks. Reports said Goldman Sachs and Morgan Stanley had been identified as lead underwriters, but that has come to naught. A contributing factor was concerns by South Korean SK hynix stockholders that a Solidigm IPO would dilute their shareholdings, making them less valuable. Solidigm currently gets the NAND for its SSDs manufactured at its Dalian plant in China, which produces 192-layer 3D NAND; reports say SK hynix has been authorized to install 240-layer NAND equipment at Dalian Fab 2, with equipping of the second Dalian plant restricted by US technology export restrictions aimed at preventing China from accessing the latest semiconductor manufacturing technology. SK hynix said the need to invest in Solidigm's growth remains unchanged and alternatives to enhance shareholder value will continue to be explored. A Solidigm IPO idea was reported in September, which would have emulated parent SK hynix's own US Nasdaq market entry in July using American Depositary Shares.
Taiwan's first-ever strike in the semiconductor industry has temporarily come to a close: the 24-hour warning strike spearheaded by Micron Technology's Taoyuan union concluded on the morning of October 23, 2026. During the action, an internal ballot saw nearly 70% of all union members sign statements opposing management's proposed compensation structure. Formal labor-management negotiations are set to resume on October 27.
Nippon Sanso Holdings Group and the Italian Ministry of Enterprises and Made in Italy (MIMIT) have signed a Letter of Intent aimed at strengthening industrial cooperation between Italy and Japan to foster new investments in semiconductors, electronics and advanced technologies. A key focus of the collaboration is the development of new production capabilities in Italy for high-technology sectors, including the semiconductor and electronics value chains; beyond serving the domestic market, these initiatives are intended to support growing demand across Europe. The agreement establishes a structured framework for identifying, assessing and evaluating new investment projects in Italy. Statements were made by Adolfo Urso, Italy's Minister of Enterprises and Made in Italy, Tadaharu Watanabe, CEO of Nippon Sanso Holdings Group, and Eduina Marino, President and CEO of Nippon Sanso in Italy. This is a Letter of Intent stage; no specific investment projects have been implemented.