Infineon establishing first high-volume fab for GaN power semiconductors on 300mm wafers in Europe
Infineon is establishing the world's first high-volume manufacturing facility for gallium nitride (GaN) power semiconductors on 300mm wafers in Europe. As part of the project, the firm will invest about €1.1bn in its existing cleanroom facilities at the site in Villach, Austria by 2034. Production is scheduled to start by the end of 2027.
- Related manufacturers
- Infineon Technologies AG
- Impact score
- 60 / 100, medium impact